Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

Sola Woo, Minsuk Kim, Hyungon Oh, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

Original languageEnglish
Pages (from-to)60-66
Number of pages7
JournalSuperlattices and Microstructures
Volume120
DOIs
Publication statusPublished - 2018 Aug 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
SPICE
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
Bending (forming)
transistors
thin films
simulation
threshold currents
Calibration
oxides
causes
Computer simulation
Electric potential

Keywords

  • a-IGZO TFT
  • Bending strain
  • Flexible display
  • TCAD simulation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors. / Woo, Sola; Kim, Minsuk; Oh, Hyungon; Cho, Kyoungah; Kim, Sangsig.

In: Superlattices and Microstructures, Vol. 120, 01.08.2018, p. 60-66.

Research output: Contribution to journalArticle

@article{e0958f9edc1c4fef937ebb321f24b48c,
title = "Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors",
abstract = "In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.",
keywords = "a-IGZO TFT, Bending strain, Flexible display, TCAD simulation",
author = "Sola Woo and Minsuk Kim and Hyungon Oh and Kyoungah Cho and Sangsig Kim",
year = "2018",
month = "8",
day = "1",
doi = "10.1016/j.spmi.2018.05.009",
language = "English",
volume = "120",
pages = "60--66",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Bending-strain-induced localized density of states in amorphous indium-gallium-zinc-oxide thin-film transistors

AU - Woo, Sola

AU - Kim, Minsuk

AU - Oh, Hyungon

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2018/8/1

Y1 - 2018/8/1

N2 - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

AB - In this study, we examine the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under bending strains by TCAD and SPICE simulations. Bending strains induce modifications of the localized density of states (DOS) in a-IGZO channel materials, which, in turn, cause changes in the electrical characteristics of the TFTs. The bending-strain-induced localized DOS, the above-threshold current, subthreshold current, and field-effect mobility are analyzed with the calibration of the current-versus-voltage curves of a reference device by TCAD simulation. Moreover, the device parameters that affect the device performance in SPICE simulation are calibrated to aid in SPICE modeling of the strained oxide TFTs.

KW - a-IGZO TFT

KW - Bending strain

KW - Flexible display

KW - TCAD simulation

UR - http://www.scopus.com/inward/record.url?scp=85056309164&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85056309164&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2018.05.009

DO - 10.1016/j.spmi.2018.05.009

M3 - Article

AN - SCOPUS:85056309164

VL - 120

SP - 60

EP - 66

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -