Bi-stable and tri-stable Magnetic domain reconfigurations of a small permalloy pattern using current pulses

Hyun Cheol Koo, R. D. Gomez

Research output: Contribution to journalArticle

Abstract

Realization of pulsed-current selectable domain configurations of small permalloy islands is reported. In the islands with 65-100 nm thickness and micron-sized lateral dimensions, the magnetic domain pattern can be uniquely set into either a four or seven closure domain configuration by applying either a positive or negative 10 ns current pulse at the density of 107 A/cm2. The transition is completely reversible. This phenomenon appears to belong to a family of current-induced magnetization reordering, whose main mechanism appears to be domain wall motion due to s-d exchange force directed along the electron flow, and partially influenced by the Amperian field produced at the contact regions. This paper presents two cases, namely, bi-stable and tri-stable configurations, and discusses the mechanism as well as power requirements in using this approach for memory device applications.

Original languageEnglish
Pages (from-to)272-276
Number of pages5
JournalJournal of Magnetism and Magnetic Materials
Volume306
Issue number2
DOIs
Publication statusPublished - 2006 Nov 1
Externally publishedYes

Fingerprint

Magnetic domains
Domain walls
Induced currents
Permalloys (trademark)
magnetic domains
Magnetization
Data storage equipment
Electrons
configurations
pulses
closures
domain wall
magnetization
requirements
electrons

Keywords

  • Bi-stable
  • Current pulse
  • Domain configuration
  • Tri-stable

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bi-stable and tri-stable Magnetic domain reconfigurations of a small permalloy pattern using current pulses. / Koo, Hyun Cheol; Gomez, R. D.

In: Journal of Magnetism and Magnetic Materials, Vol. 306, No. 2, 01.11.2006, p. 272-276.

Research output: Contribution to journalArticle

@article{7dac53cccb56495fb1065bff7f78998c,
title = "Bi-stable and tri-stable Magnetic domain reconfigurations of a small permalloy pattern using current pulses",
abstract = "Realization of pulsed-current selectable domain configurations of small permalloy islands is reported. In the islands with 65-100 nm thickness and micron-sized lateral dimensions, the magnetic domain pattern can be uniquely set into either a four or seven closure domain configuration by applying either a positive or negative 10 ns current pulse at the density of 107 A/cm2. The transition is completely reversible. This phenomenon appears to belong to a family of current-induced magnetization reordering, whose main mechanism appears to be domain wall motion due to s-d exchange force directed along the electron flow, and partially influenced by the Amperian field produced at the contact regions. This paper presents two cases, namely, bi-stable and tri-stable configurations, and discusses the mechanism as well as power requirements in using this approach for memory device applications.",
keywords = "Bi-stable, Current pulse, Domain configuration, Tri-stable",
author = "Koo, {Hyun Cheol} and Gomez, {R. D.}",
year = "2006",
month = "11",
day = "1",
doi = "10.1016/j.jmmm.2006.03.027",
language = "English",
volume = "306",
pages = "272--276",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "2",

}

TY - JOUR

T1 - Bi-stable and tri-stable Magnetic domain reconfigurations of a small permalloy pattern using current pulses

AU - Koo, Hyun Cheol

AU - Gomez, R. D.

PY - 2006/11/1

Y1 - 2006/11/1

N2 - Realization of pulsed-current selectable domain configurations of small permalloy islands is reported. In the islands with 65-100 nm thickness and micron-sized lateral dimensions, the magnetic domain pattern can be uniquely set into either a four or seven closure domain configuration by applying either a positive or negative 10 ns current pulse at the density of 107 A/cm2. The transition is completely reversible. This phenomenon appears to belong to a family of current-induced magnetization reordering, whose main mechanism appears to be domain wall motion due to s-d exchange force directed along the electron flow, and partially influenced by the Amperian field produced at the contact regions. This paper presents two cases, namely, bi-stable and tri-stable configurations, and discusses the mechanism as well as power requirements in using this approach for memory device applications.

AB - Realization of pulsed-current selectable domain configurations of small permalloy islands is reported. In the islands with 65-100 nm thickness and micron-sized lateral dimensions, the magnetic domain pattern can be uniquely set into either a four or seven closure domain configuration by applying either a positive or negative 10 ns current pulse at the density of 107 A/cm2. The transition is completely reversible. This phenomenon appears to belong to a family of current-induced magnetization reordering, whose main mechanism appears to be domain wall motion due to s-d exchange force directed along the electron flow, and partially influenced by the Amperian field produced at the contact regions. This paper presents two cases, namely, bi-stable and tri-stable configurations, and discusses the mechanism as well as power requirements in using this approach for memory device applications.

KW - Bi-stable

KW - Current pulse

KW - Domain configuration

KW - Tri-stable

UR - http://www.scopus.com/inward/record.url?scp=33748312198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748312198&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.03.027

DO - 10.1016/j.jmmm.2006.03.027

M3 - Article

VL - 306

SP - 272

EP - 276

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2

ER -