Bias temperature instability analysis on memory properties improved by hydrogen annealing treatment in Ti/HfOx /Pt capacitors

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The influence of the hydrogen annealing treatment on the reliability of Ti/HfOx /Pt capacitors is investigated by analyzing bias temperature instability (BTI). As compared to the N2-annealed sample, in the case of hydrogen-annealed samples, both the set/reset voltages and currents are reduced from 6.5 V/-1.6 V to 3.8 V/-1.2 V and from 4 mA/170 nA to 800 μA/30 nA at 0.1 V, respectively. Of particular interest is the dramatic reduction in the set voltage variation from 3.3 V to 1.8 V. In addition, in BTI experiments, the current shift at the high resistance state (HRS) is reduced from 1.5 μA to 40 nA under a bias stress of -1 V/1000 s and from 40 μA to 0.5 μA under a temperature stress of 120 °C/1000 s. These results show that the hydrogen annealing treatment is very effective in improving the reliability of RRAM cells because it reduces the leakage current under bias temperature stress.

Original languageEnglish
Pages (from-to)497-500
Number of pages4
JournalPhysica Status Solidi - Rapid Research Letters
Volume7
Issue number7
DOIs
Publication statusPublished - 2013 Jul

Keywords

  • Bias temperature instability
  • HfO
  • Hydrogen annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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