Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Y. Kim; Y. Kim; B. Chun; D. Kim; J. Hwang; S. Kim; J. Rhee; T. Kim

doi:10.1109/INTMAG.2006.375574

Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Y. Kim, Y. Kim, B. Chun, D. Kim, J. Hwang, S. Kim, J. Rhee, T. Kim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	INTERMAG 2006 - IEEE International Magnetics Conference
Pages	74
Number of pages	1
DOIs	https://doi.org/10.1109/INTMAG.2006.375574
Publication status	Published - 2006
Event	INTERMAG 2006 - IEEE International Magnetics Conference - San Diego, CA, United States Duration: 2006 May 8 → 2006 May 12

Publication series

Name	INTERMAG 2006 - IEEE International Magnetics Conference

Other

Other	INTERMAG 2006 - IEEE International Magnetics Conference
Country/Territory	United States
City	San Diego, CA
Period	06/5/8 → 06/5/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/INTMAG.2006.375574

Cite this

Kim, Y., Kim, Y., Chun, B., Kim, D., Hwang, J., Kim, S., Rhee, J., & Kim, T. (2006). Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. In INTERMAG 2006 - IEEE International Magnetics Conference (pp. 74). [4261508] (INTERMAG 2006 - IEEE International Magnetics Conference). https://doi.org/10.1109/INTMAG.2006.375574

Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. / Kim, Y.; Kim, Y.; Chun, B. et al.

INTERMAG 2006 - IEEE International Magnetics Conference. 2006. p. 74 4261508 (INTERMAG 2006 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kim, Y, Kim, Y, Chun, B, Kim, D, Hwang, J, Kim, S, Rhee, J & Kim, T 2006, Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. in INTERMAG 2006 - IEEE International Magnetics Conference., 4261508, INTERMAG 2006 - IEEE International Magnetics Conference, pp. 74, INTERMAG 2006 - IEEE International Magnetics Conference, San Diego, CA, United States, 06/5/8. https://doi.org/10.1109/INTMAG.2006.375574

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AU - Kim, Y.

AU - Chun, B.

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AU - Hwang, J.

AU - Kim, S.

AU - Rhee, J.

AU - Kim, T.

PY - 2006

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M3 - Conference contribution

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Y2 - 8 May 2006 through 12 May 2006

ER -

Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

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Other

ASJC Scopus subject areas

Access to Document

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