Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Y. Kim, Young-geun Kim, B. Chun, D. Kim, J. Hwang, S. Kim, J. Rhee, T. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationINTERMAG 2006 - IEEE International Magnetics Conference
Pages74
Number of pages1
DOIs
Publication statusPublished - 2006
EventINTERMAG 2006 - IEEE International Magnetics Conference - San Diego, CA, United States
Duration: 2006 May 82006 May 12

Other

OtherINTERMAG 2006 - IEEE International Magnetics Conference
CountryUnited States
CitySan Diego, CA
Period06/5/806/5/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Y., Kim, Y., Chun, B., Kim, D., Hwang, J., Kim, S., ... Kim, T. (2006). Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. In INTERMAG 2006 - IEEE International Magnetics Conference (pp. 74). [4261508] https://doi.org/10.1109/INTMAG.2006.375574

Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. / Kim, Y.; Kim, Young-geun; Chun, B.; Kim, D.; Hwang, J.; Kim, S.; Rhee, J.; Kim, T.

INTERMAG 2006 - IEEE International Magnetics Conference. 2006. p. 74 4261508.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, Y, Kim, Y, Chun, B, Kim, D, Hwang, J, Kim, S, Rhee, J & Kim, T 2006, Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. in INTERMAG 2006 - IEEE International Magnetics Conference., 4261508, pp. 74, INTERMAG 2006 - IEEE International Magnetics Conference, San Diego, CA, United States, 06/5/8. https://doi.org/10.1109/INTMAG.2006.375574
Kim Y, Kim Y, Chun B, Kim D, Hwang J, Kim S et al. Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. In INTERMAG 2006 - IEEE International Magnetics Conference. 2006. p. 74. 4261508 https://doi.org/10.1109/INTMAG.2006.375574
Kim, Y. ; Kim, Young-geun ; Chun, B. ; Kim, D. ; Hwang, J. ; Kim, S. ; Rhee, J. ; Kim, T. / Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. INTERMAG 2006 - IEEE International Magnetics Conference. 2006. pp. 74
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