Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

Y. Kim, Y. Kim, B. Chun, D. Kim, J. Hwang, S. Kim, J. Rhee, T. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationINTERMAG 2006 - IEEE International Magnetics Conference
Number of pages1
DOIs
Publication statusPublished - 2006 Dec 1
EventINTERMAG 2006 - IEEE International Magnetics Conference - San Diego, CA, United States
Duration: 2006 May 82006 May 12

Publication series

NameINTERMAG 2006 - IEEE International Magnetics Conference

Other

OtherINTERMAG 2006 - IEEE International Magnetics Conference
CountryUnited States
CitySan Diego, CA
Period06/5/806/5/12

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Kim, Y., Kim, Y., Chun, B., Kim, D., Hwang, J., Kim, S., Rhee, J., & Kim, T. (2006). Bias voltage dependence of magnetic of tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer. In INTERMAG 2006 - IEEE International Magnetics Conference [4261508] (INTERMAG 2006 - IEEE International Magnetics Conference). https://doi.org/10.1109/INTMAG.2006.375574