Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

H. I. Yim; S. Y. Lee; J. Y. Hwang; J. R. Rhee; B. S. Chun; K. L. Wang; Y. K. Kim; T. W. Kim; S. S. Lee; D. G. Hwang

doi:10.1002/pssa.200723639

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

H. I. Yim, S. Y. Lee, J. Y. Hwang, J. R. Rhee, B. S. Chun, K. L. Wang, Y. K. Kim, T. W. Kim, S. S. Lee, D. G. Hwang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFe-SiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO _x/free layer 10/AlO _x/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of+0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage.

Original language	English
Pages (from-to)	1847-1850
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	8
DOIs	https://doi.org/10.1002/pssa.200723639
Publication status	Published - 2008 Aug

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1002/pssa.200723639

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Yim, H. I., Lee, S. Y., Hwang, J. Y., Rhee, J. R., Chun, B. S., Wang, K. L., Kim, Y. K., Kim, T. W., Lee, S. S., & Hwang, D. G. (2008). Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers. Physica Status Solidi (A) Applications and Materials Science, 205(8), 1847-1850. https://doi.org/10.1002/pssa.200723639

@article{d298f089e7114f008a874fc0081de886,

title = "Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers",

abstract = "Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFe-SiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x/free layer 10/AlO x/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of+0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage.",

author = "Yim, {H. I.} and Lee, {S. Y.} and Hwang, {J. Y.} and Rhee, {J. R.} and Chun, {B. S.} and Wang, {K. L.} and Kim, {Y. K.} and Kim, {T. W.} and Lee, {S. S.} and Hwang, {D. G.}",

year = "2008",

month = aug,

doi = "10.1002/pssa.200723639",

language = "English",

volume = "205",

pages = "1847--1850",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "8",

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TY - JOUR

T1 - Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

AU - Yim, H. I.

AU - Lee, S. Y.

AU - Hwang, J. Y.

AU - Rhee, J. R.

AU - Chun, B. S.

AU - Wang, K. L.

AU - Kim, Y. K.

AU - Kim, T. W.

AU - Lee, S. S.

AU - Hwang, D. G.

PY - 2008/8

Y1 - 2008/8

N2 - Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFe-SiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x/free layer 10/AlO x/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of+0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage.

AB - Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFe-SiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO x/free layer 10/AlO x/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of+0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage.

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U2 - 10.1002/pssa.200723639

DO - 10.1002/pssa.200723639

M3 - Article

AN - SCOPUS:54249169159

SN - 1862-6300

VL - 205

SP - 1847

EP - 1850

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 8

ER -

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

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