Abstract
A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.
| Original language | English |
|---|---|
| Article number | 08A902 |
| Journal | Journal of Applied Physics |
| Volume | 99 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2006 May 29 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers. / Chun, Byong Sun; Ko, Seung Pil; Kim, Young-geun; Hwang, Jae Youn; Rhee, Jang Roh; Kim, Taewan; Ju, Jae Seon.
In: Journal of Applied Physics, Vol. 99, No. 8, 08A902, 29.05.2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bias voltage dependence of magnetic tunnel junctions comprising double barriers and amorphous NiFeSiB layers
AU - Chun, Byong Sun
AU - Ko, Seung Pil
AU - Kim, Young-geun
AU - Hwang, Jae Youn
AU - Rhee, Jang Roh
AU - Kim, Taewan
AU - Ju, Jae Seon
PY - 2006/5/29
Y1 - 2006/5/29
N2 - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.
AB - A double-barrier magnetic tunnel junction (DMTJ) comprising an amorphous ferromagnetic NiFeSiB was investigated to reduce bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The typical DMTJ structures were Ta 45Ru 9.5IrMn 10CoFe 7 AlOx free layer 7 AlOx CoFe 7IrMn 10Ru 60 (in nanometers). Various free layers such as CoFe 7, NiFeSiB 7, CoFe 3.5NiFeSiB 3.5, and NiFeSiB 3.5CoFe 3.5 were prepared and compared. The NiFeSiB-used DMTJ shows a low root-mean-square surface roughness of 0.17 nm, a resistance of about 860 , a Vh (voltage where the TMR ratio becomes half of its nonbiased value) of 1.1 V, and a high junction breakdown voltage of 2.0 V. The DMTJ with an amorphous NiFeSiB free layer offers smooth surface roughness resulting in reduced interlayer coupling field and bias voltage dependence.
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UR - http://www.scopus.com/inward/citedby.url?scp=33646760330&partnerID=8YFLogxK
U2 - 10.1063/1.2165129
DO - 10.1063/1.2165129
M3 - Article
AN - SCOPUS:33646760330
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 08A902
ER -