Bias voltage dependence of magnetic tunnel junctions comprising double barriers and CoFe/NiFeSiB/CoFe free layer

You Song Kim, Byong Sun Chun, Deok Kee Kim, Young-geun Kim

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The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlO/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an Ni1 6Fe62Si8B14 7 nm, Co90Fe10 (fcc) 7 nm, or CoFe t1/NiFeSiB t2/CoFe t1 layer in which the thicknesses t1 and t2 are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of 86 k Ω μm2, a coercivity (Hc) of 11 Oe, and an interlayer coupling field (Hi) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of 68 k Ωμm2, and a Hcof 11 Oe, but an increased Hi of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that Hi increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and Hibecame large because of the magnetostatic Neel coupling.

Original languageEnglish
Pages (from-to)2649-2651
Number of pages3
JournalIEEE Transactions on Magnetics
Issue number10
Publication statusPublished - 2006 Jan 1



  • Amorphous materials
  • bias voltage dependence
  • double-barrier magnetic tunnel junction (DMTJ)
  • NiFeSiB

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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