Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

Se Chung Oh, Seung Young Park, Aurélien Manchon, Mairbek Chshiev, Jae Ho Han, Hyun Woo Lee, Jang Eun Lee, Kyung Tae Nam, Younghun Jo, Yo Chan Kong, Bernard Dieny, Kyoung Jin Lee

Research output: Contribution to journalArticle

163 Citations (Scopus)

Abstract

Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

Original languageEnglish
Pages (from-to)898-902
Number of pages5
JournalNature Physics
Volume5
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes

Fingerprint

tunnel junctions
torque
electric potential
broken symmetry
asymmetry
retarding
magnetization
causes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions. / Oh, Se Chung; Park, Seung Young; Manchon, Aurélien; Chshiev, Mairbek; Han, Jae Ho; Lee, Hyun Woo; Lee, Jang Eun; Nam, Kyung Tae; Jo, Younghun; Kong, Yo Chan; Dieny, Bernard; Lee, Kyoung Jin.

In: Nature Physics, Vol. 5, No. 12, 01.12.2009, p. 898-902.

Research output: Contribution to journalArticle

Oh, SC, Park, SY, Manchon, A, Chshiev, M, Han, JH, Lee, HW, Lee, JE, Nam, KT, Jo, Y, Kong, YC, Dieny, B & Lee, KJ 2009, 'Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions', Nature Physics, vol. 5, no. 12, pp. 898-902. https://doi.org/10.1038/nphys1427
Oh, Se Chung ; Park, Seung Young ; Manchon, Aurélien ; Chshiev, Mairbek ; Han, Jae Ho ; Lee, Hyun Woo ; Lee, Jang Eun ; Nam, Kyung Tae ; Jo, Younghun ; Kong, Yo Chan ; Dieny, Bernard ; Lee, Kyoung Jin. / Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions. In: Nature Physics. 2009 ; Vol. 5, No. 12. pp. 898-902.
@article{04527673135c4e24a5a9bee82ff3f640,
title = "Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions",
abstract = "Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.",
author = "Oh, {Se Chung} and Park, {Seung Young} and Aur{\'e}lien Manchon and Mairbek Chshiev and Han, {Jae Ho} and Lee, {Hyun Woo} and Lee, {Jang Eun} and Nam, {Kyung Tae} and Younghun Jo and Kong, {Yo Chan} and Bernard Dieny and Lee, {Kyoung Jin}",
year = "2009",
month = "12",
day = "1",
doi = "10.1038/nphys1427",
language = "English",
volume = "5",
pages = "898--902",
journal = "Nature Physics",
issn = "1745-2473",
publisher = "Nature Publishing Group",
number = "12",

}

TY - JOUR

T1 - Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions

AU - Oh, Se Chung

AU - Park, Seung Young

AU - Manchon, Aurélien

AU - Chshiev, Mairbek

AU - Han, Jae Ho

AU - Lee, Hyun Woo

AU - Lee, Jang Eun

AU - Nam, Kyung Tae

AU - Jo, Younghun

AU - Kong, Yo Chan

AU - Dieny, Bernard

AU - Lee, Kyoung Jin

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

AB - Spin-transfer torque (STT) allows the electrical control of magnetic states in nanostructures. The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device applications. It has been demonstrated that the MTJ has a sizable perpendicular STT (, field-like torque), which substantially affects STT-driven magnetization dynamics. In contrast to symmetric MTJs where the bias dependence of is quadratic, it is theoretically predicted that the symmetry breaking of the system causes an extra linear bias dependence. Here, we report experimental results that are consistent with the predicted linear bias dependence in asymmetric MTJs. The linear contribution is quite significant and its sign changes from positive to negative as the asymmetry is modified. This result opens a way to design the bias dependence of the field-like term, which is useful for device applications by allowing, in particular, the suppression of the abnormal switching-back phenomena.

UR - http://www.scopus.com/inward/record.url?scp=71449104963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71449104963&partnerID=8YFLogxK

U2 - 10.1038/nphys1427

DO - 10.1038/nphys1427

M3 - Article

AN - SCOPUS:71449104963

VL - 5

SP - 898

EP - 902

JO - Nature Physics

JF - Nature Physics

SN - 1745-2473

IS - 12

ER -