Bidirectional floating-base BJT ESD protected RFID chip

Hee Bok Kang, Miseok Lee, Jeong Ok Ki, Youngwug Kim, Jinseog Choi, Sang Hyeon Kwak, Man Young Sung, Young Jin Park, Bok Gil Choi, Jinyong Chung

Research output: Contribution to journalConference article

Abstract

The maximum peak-to-peak radio frequency (RF) signal antenna voltage level can be extended to reach to over 12 Vpp, -6 V to +6 V. Thus it is desirable that the electro-static discharge (ESD) device does not turn on at the normal operating RF antenna signal voltage level. The turn-on threshold negative voltage of the ESD device of the PN diode type is around -0.5 V in the conventional radio frequency identification (RFID) chip. The asymmetric threshold voltage characteristics of the ESD device of the RFID chip makes the distortion of the RF antenna signal at the high intensity RF input field. In the proposed floating base vertical PNP ESD device, N-type doped N-WELL floating base is sandwiched between two p-type P+ emitter and P-WELL collector. Floating base BJT ESD device enhances the performance of parasitic BJT current in the ESD mode. During the negative voltage phase of RF antenna input signal, the negative voltage of RF antenna input is extended to around -10 V. This extension of RF antenna input operation voltage range makes to prevent from any distortion of RF antenna signal at the high RF input field. The measured HBM ESD protection level of the floating base BJT ESD device is over 2000 V with the P+ anode layout area of 400m2.

Original languageEnglish
Pages (from-to)42-52
Number of pages11
JournalIntegrated Ferroelectrics
Volume112
Issue number1
DOIs
Publication statusPublished - 2009
Event21st International Symposium on Integrated Ferroelectrics and Functionalities, ISIF2 2009 - Colorado Springs, CO, United States
Duration: 2009 Sep 272009 Sep 30

Keywords

  • BJT
  • CDM
  • ESD
  • FeRAM
  • HBM
  • MM
  • PN-diode
  • RFID
  • floating base

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kang, H. B., Lee, M., Ki, J. O., Kim, Y., Choi, J., Kwak, S. H., Sung, M. Y., Park, Y. J., Choi, B. G., & Chung, J. (2009). Bidirectional floating-base BJT ESD protected RFID chip. Integrated Ferroelectrics, 112(1), 42-52. https://doi.org/10.1080/10584587.2009.484682