Bidirectional floating-base BJT ESD protected RFID chip

Hee Bok Kang, Miseok Lee, Jeong Ok Ki, Youngwug Kim, Jinseog Choi, Sang Hyeon Kwak, Man Young Sung, Young Jin Park, Bok Gil Choi, Jinyong Chung

Research output: Contribution to journalArticle

Abstract

The maximum peak-to-peak radio frequency (RF) signal antenna voltage level can be extended to reach to over 12 Vpp, -6 V to +6 V. Thus it is desirable that the electro-static discharge (ESD) device does not turn on at the normal operating RF antenna signal voltage level. The turn-on threshold negative voltage of the ESD device of the PN diode type is around -0.5 V in the conventional radio frequency identification (RFID) chip. The asymmetric threshold voltage characteristics of the ESD device of the RFID chip makes the distortion of the RF antenna signal at the high intensity RF input field. In the proposed floating base vertical PNP ESD device, N-type doped N-WELL floating base is sandwiched between two p-type P+ emitter and P-WELL collector. Floating base BJT ESD device enhances the performance of parasitic BJT current in the ESD mode. During the negative voltage phase of RF antenna input signal, the negative voltage of RF antenna input is extended to around -10 V. This extension of RF antenna input operation voltage range makes to prevent from any distortion of RF antenna signal at the high RF input field. The measured HBM ESD protection level of the floating base BJT ESD device is over 2000 V with the P+ anode layout area of 400m2.

Original languageEnglish
Pages (from-to)42-52
Number of pages11
JournalIntegrated Ferroelectrics
Volume112
Issue number1
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

radio frequency discharge
Radio frequency identification (RFID)
floating
radio frequencies
chips
Antennas
antennas
Electric potential
electric potential
Threshold voltage
Anodes
Diodes
threshold voltage
layouts
accumulators
emitters
anodes
diodes

Keywords

  • BJT
  • CDM
  • ESD
  • FeRAM
  • floating base
  • HBM
  • MM
  • PN-diode
  • RFID

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Control and Systems Engineering

Cite this

Kang, H. B., Lee, M., Ki, J. O., Kim, Y., Choi, J., Kwak, S. H., ... Chung, J. (2009). Bidirectional floating-base BJT ESD protected RFID chip. Integrated Ferroelectrics, 112(1), 42-52. https://doi.org/10.1080/10584587.2009.484682

Bidirectional floating-base BJT ESD protected RFID chip. / Kang, Hee Bok; Lee, Miseok; Ki, Jeong Ok; Kim, Youngwug; Choi, Jinseog; Kwak, Sang Hyeon; Sung, Man Young; Park, Young Jin; Choi, Bok Gil; Chung, Jinyong.

In: Integrated Ferroelectrics, Vol. 112, No. 1, 01.12.2009, p. 42-52.

Research output: Contribution to journalArticle

Kang, HB, Lee, M, Ki, JO, Kim, Y, Choi, J, Kwak, SH, Sung, MY, Park, YJ, Choi, BG & Chung, J 2009, 'Bidirectional floating-base BJT ESD protected RFID chip', Integrated Ferroelectrics, vol. 112, no. 1, pp. 42-52. https://doi.org/10.1080/10584587.2009.484682
Kang, Hee Bok ; Lee, Miseok ; Ki, Jeong Ok ; Kim, Youngwug ; Choi, Jinseog ; Kwak, Sang Hyeon ; Sung, Man Young ; Park, Young Jin ; Choi, Bok Gil ; Chung, Jinyong. / Bidirectional floating-base BJT ESD protected RFID chip. In: Integrated Ferroelectrics. 2009 ; Vol. 112, No. 1. pp. 42-52.
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