Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process

Seulki Cho, Seong Ji Min, Myung Yeon Cho, Ik Soo Kim, So Mang Kim, Byung-Moo Moon, Kyoung Sook Moon, Daeseok Lee, Jong Min Oh, Sang Mo Koo

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.

Original languageEnglish
JournalCeramics International
DOIs
Publication statusPublished - 2019 Jan 1

Fingerprint

Aerosols
Heterojunctions
Charge transfer
Silicon
Temperature sensors
Activation energy
Lighting
Experiments
Temperature
Electrons
Substrates

Keywords

  • Aerosol deposition
  • Bipolar conductivity
  • Heterostructure
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process. / Cho, Seulki; Min, Seong Ji; Cho, Myung Yeon; Kim, Ik Soo; Kim, So Mang; Moon, Byung-Moo; Moon, Kyoung Sook; Lee, Daeseok; Oh, Jong Min; Koo, Sang Mo.

In: Ceramics International, 01.01.2019.

Research output: Contribution to journalArticle

Cho, Seulki ; Min, Seong Ji ; Cho, Myung Yeon ; Kim, Ik Soo ; Kim, So Mang ; Moon, Byung-Moo ; Moon, Kyoung Sook ; Lee, Daeseok ; Oh, Jong Min ; Koo, Sang Mo. / Bipolar charge transport in intrinsic SiC on p- and n-Si heterostructures prepared by a room temperature aerosol deposition process. In: Ceramics International. 2019.
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AU - Kim, Ik Soo

AU - Kim, So Mang

AU - Moon, Byung-Moo

AU - Moon, Kyoung Sook

AU - Lee, Daeseok

AU - Oh, Jong Min

AU - Koo, Sang Mo

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AB - Dense SiC layers with a thickness of 150 nm were prepared on n- and p-type Si substrates using aerosol deposition (AD) at room temperature. The contribution of electrons and holes to the conductivity in Ni/i-SiC/Si structures was investigated by conducting experiments involving the injection of carriers from silicon. Our results showed that the injection of carriers via light illumination and temperature experiments led to the generation of minority carriers, which contributed to the conductivity in the Ni/i-SiC/Si structures. The activation energies were found to be 0.8 eV and 0.4 eV for i-SiC/n-Si and i-SiC/p-Si, respectively. The conductivity of these Ni/i-SiC/Si structures was also affected by the trap-assisted tunneling process. The results indicate that the AD-prepared SiC/Si heterostructures could possibly be used to control bipolar conductivity and hold potential for application in temperature sensors and photovoltaics.

KW - Aerosol deposition

KW - Bipolar conductivity

KW - Heterostructure

KW - Silicon carbide

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