Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications

Tae Geun Seong, Mi Ri Joung, Jong Woo Sun, Min Kyu Yang, Jeon Kook Lee, Ji Won Moon, Jaesung Roh, Sahn Nahm

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Bipolar resistive switching behavior was observed in a Pt/NiO/TiN device. The device exhibited switching behavior that was stable over 100 cycles and did not degrade after 10 4 s. An electroforming process was required to obtain these bipolar resistive switching properties, and the conduction behavior of the low resistance state followed Ohm's law, indicating that conductive filaments formed during the electroforming process. The conductive filaments consisted of oxygen vacancies and the Pt electrode behaved as an oxygen reservoir. The bipolar resistive switching of the Pt/NiO/TiN device was explained by the generation and annihilation of oxygen vacancies in the filaments.

Original languageEnglish
Article number041102
JournalJapanese Journal of Applied Physics
Volume51
Issue number4 PART 1
DOIs
Publication statusPublished - 2012 Apr 1

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Electroforming
electroforming
Data storage equipment
filaments
Oxygen vacancies
oxygen
Ohms law
low resistance
conduction
cycles
Electrodes
Oxygen
electrodes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications. / Seong, Tae Geun; Joung, Mi Ri; Sun, Jong Woo; Yang, Min Kyu; Lee, Jeon Kook; Moon, Ji Won; Roh, Jaesung; Nahm, Sahn.

In: Japanese Journal of Applied Physics, Vol. 51, No. 4 PART 1, 041102, 01.04.2012.

Research output: Contribution to journalArticle

Seong, Tae Geun ; Joung, Mi Ri ; Sun, Jong Woo ; Yang, Min Kyu ; Lee, Jeon Kook ; Moon, Ji Won ; Roh, Jaesung ; Nahm, Sahn. / Bipolar resistive switching behavior of a Pt/NiO/TiN device for nonvolatile memory applications. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 4 PART 1.
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AU - Roh, Jaesung

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