Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices

Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

This paper reports the bipolar resistive switching characteristics of TaN<inf>x</inf>-based resistive random access memory (ReRAM). The conduction mechanism is explained by formation and rupture of conductive filaments caused by migration of nitrogen ions and vacancies; this mechanism is in good agreement with either Ohmic conduction or the Poole-Frenkel emission model. The devices exhibit that the reset voltage varies from -0.82 V to -0.62 V, whereas the set voltage ranges from 1.01 V to 1.30 V for 120 DC sweep cycles. In terms of reliability, the devices exhibit good retention (>10<sup>5</sup>s) and pulse-switching endurance (>10<sup>6</sup> cycles) properties. These results indicate that TaN<inf>x</inf>-based ReRAM devices have a potential for future nonvolatile memory devices.

Original languageEnglish
Article number203101
JournalApplied Physics Letters
Volume106
Issue number20
DOIs
Publication statusPublished - 2015 May 18

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tantalum nitrides
random access memory
conduction
cycles
nitrogen ions
endurance
electric potential
filaments
direct current
pulses

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices. / Kim, Myung Ju; Jeon, Dong Su; Park, Ju Hyun; Kim, Tae Geun.

In: Applied Physics Letters, Vol. 106, No. 20, 203101, 18.05.2015.

Research output: Contribution to journalArticle

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