Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

Hee Dong Kim, Ho Myoung An, Yun Mo Sung, Hyunsik Im, Tae Geun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

Original languageEnglish
Article number6403533
Pages (from-to)252-257
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume13
Issue number1
DOIs
Publication statusPublished - 2013 Mar 19

Fingerprint

Zirconium
Nitrides
Data storage equipment
Durability
Capacitors
Temperature

Keywords

  • Atomic force microscopy (AFM)
  • resistive switching (RS)
  • SCLC
  • ZrN

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality

Cite this

Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells. / Kim, Hee Dong; An, Ho Myoung; Sung, Yun Mo; Im, Hyunsik; Kim, Tae Geun.

In: IEEE Transactions on Device and Materials Reliability, Vol. 13, No. 1, 6403533, 19.03.2013, p. 252-257.

Research output: Contribution to journalArticle

@article{c5f181d08be046e99819b7b71ea94f07,
title = "Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells",
abstract = "This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.",
keywords = "Atomic force microscopy (AFM), resistive switching (RS), SCLC, ZrN",
author = "Kim, {Hee Dong} and An, {Ho Myoung} and Sung, {Yun Mo} and Hyunsik Im and Kim, {Tae Geun}",
year = "2013",
month = "3",
day = "19",
doi = "10.1109/TDMR.2012.2237404",
language = "English",
volume = "13",
pages = "252--257",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",

}

TY - JOUR

T1 - Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

AU - Kim, Hee Dong

AU - An, Ho Myoung

AU - Sung, Yun Mo

AU - Im, Hyunsik

AU - Kim, Tae Geun

PY - 2013/3/19

Y1 - 2013/3/19

N2 - This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

AB - This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

KW - Atomic force microscopy (AFM)

KW - resistive switching (RS)

KW - SCLC

KW - ZrN

UR - http://www.scopus.com/inward/record.url?scp=84874965240&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874965240&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2012.2237404

DO - 10.1109/TDMR.2012.2237404

M3 - Article

AN - SCOPUS:84874965240

VL - 13

SP - 252

EP - 257

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 1

M1 - 6403533

ER -