Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells

Hee Dong Kim, Ho Myoung An, Yun Mo Sung, Hyunsik Im, Tae Geun Kim

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104. The device also showed an endurance of > 109 cycles and a retention time of > 10 4s at 85 °C. The temperature-dependent studies of on/off states show that metallic conduction is responsible for on state, whereas semiconducting or insulating behaviors are clearly observed from off -state devices. These results show that ZrN-based RSM can be used as a promising RSM device.

Original languageEnglish
Article number6403533
Pages (from-to)252-257
Number of pages6
JournalIEEE Transactions on Device and Materials Reliability
Volume13
Issue number1
DOIs
Publication statusPublished - 2013

Keywords

  • Atomic force microscopy (AFM)
  • SCLC
  • ZrN
  • resistive switching (RS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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