Bipolar Switching Behavior of ZnO<inf> x</inf> Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures

Seonho Bae, Dae Sik Kim, Seojoo Jung, Woo Seop Jeong, Jee Eun Lee, Seunghee Cho, Junsung Park, Dong Jin Byun

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO<inf>2</inf>/Si(100) substrate, and the ZnO growth temperature was varied from 300°C to 500°C in steps of 100°C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn<inf>1</inf>O<inf>0.9</inf> at 300°C, stoichiometric Zn<inf>1</inf>O<inf>1</inf> at 400°C, and oxygen-rich Zn<inf>1</inf>O<inf>1.3</inf> at 500°C. Resistive switching properties were observed in the ZnO films grown at 300°C and 400°C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500°C. The ZnO film grown at 500°C had higher concentration of both nonlattice oxygen (4.95%) and oxygen vacancy (3.23%) than those grown at 300°C or 400°C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.

Original languageEnglish
Pages (from-to)4175-4181
Number of pages7
JournalJournal of Electronic Materials
Volume44
Issue number11
DOIs
Publication statusPublished - 2015 Jul 28

Fingerprint

Metallorganic chemical vapor deposition
Growth temperature
metalorganic chemical vapor deposition
Thin films
thin films
oxygen
temperature
Oxygen vacancies
Oxygen
Rutherford backscattering spectroscopy
high current
backscattering
chemical composition
Electric potential
electric potential
Substrates
Chemical analysis
spectroscopy

Keywords

  • bipolar switching behavior
  • metalorganic chemical vapor deposition
  • Rutherford backscattering spectroscopy (RBS)
  • x-ray photoelectron spectroscopy (XPS)
  • ZnO

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Bipolar Switching Behavior of ZnO<inf> x</inf> Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures. / Bae, Seonho; Kim, Dae Sik; Jung, Seojoo; Jeong, Woo Seop; Lee, Jee Eun; Cho, Seunghee; Park, Junsung; Byun, Dong Jin.

In: Journal of Electronic Materials, Vol. 44, No. 11, 28.07.2015, p. 4175-4181.

Research output: Contribution to journalArticle

Bae, Seonho ; Kim, Dae Sik ; Jung, Seojoo ; Jeong, Woo Seop ; Lee, Jee Eun ; Cho, Seunghee ; Park, Junsung ; Byun, Dong Jin. / Bipolar Switching Behavior of ZnO<inf> x</inf> Thin Films Deposited by Metalorganic Chemical Vapor Deposition at Various Growth Temperatures. In: Journal of Electronic Materials. 2015 ; Vol. 44, No. 11. pp. 4175-4181.
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abstract = "The bipolar resistive switching behaviors of ZnO films grown at various temperatures by metalorganic chemical vapor deposition have been investigated. The ZnO films were grown on Pt/Ti/SiO2/Si(100) substrate, and the ZnO growth temperature was varied from 300°C to 500°C in steps of 100°C. Rutherford backscattering spectroscopy analysis results showed that the chemical compositions of the ZnO films were oxygen-poor Zn1O0.9 at 300°C, stoichiometric Zn1O1 at 400°C, and oxygen-rich Zn1O1.3 at 500°C. Resistive switching properties were observed in the ZnO films grown at 300°C and 400°C. In contrast, high current, without switching properties, was found in the ZnO film grown at 500°C. The ZnO film grown at 500°C had higher concentration of both nonlattice oxygen (4.95{\%}) and oxygen vacancy (3.23{\%}) than those grown at 300°C or 400°C. The resistive switching behaviors of ZnO films are related to the ZnO growth temperature via the relative amount of oxygen vacancies in the film. Pt/ZnO/Pt devices showed asymmetric resistive switching with narrow dispersion of switching voltage.",
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