Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate

Beom Seok Lee, Bo Yun Kim, Ji Hyeon Lee, Jong Hee Yoo, Kwon Hong, Sahn Nahm

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

Original languageEnglish
Pages (from-to)1825-1830
Number of pages6
JournalCurrent Applied Physics
Volume14
Issue number12
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Amorphous films
Oxygen vacancies
Electroforming
low resistance
Oxygen
electroforming
Thin films
high resistance
oxygen
Substrates
thin films
oxygen ions
Ions
Electrodes
conduction
Partial pressure
electrodes
partial pressure
electric contacts
traps

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate. / Lee, Beom Seok; Kim, Bo Yun; Lee, Ji Hyeon; Hee Yoo, Jong; Hong, Kwon; Nahm, Sahn.

In: Current Applied Physics, Vol. 14, No. 12, 01.01.2014, p. 1825-1830.

Research output: Contribution to journalArticle

Lee, Beom Seok ; Kim, Bo Yun ; Lee, Ji Hyeon ; Hee Yoo, Jong ; Hong, Kwon ; Nahm, Sahn. / Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate. In: Current Applied Physics. 2014 ; Vol. 14, No. 12. pp. 1825-1830.
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AU - Hong, Kwon

AU - Nahm, Sahn

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N2 - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

AB - Pt/TiO2/TiN device with the amorphous TiO2 film grown at room temperature under an oxygen partial pressure of 1.0 mTorr showed reliable bipolar switching behavior. During the electroforming process, a large number of oxygen vacancies formed in the TiO2 film and accumulated at the Pt/TiO2 interface. The barrier height of the Schottky contact of the Pt/TiO2 interface was reduced owing to the presence of these oxygen vacancies, resulting in the low-resistance state (LRS). Moreover, oxygen ions diffused into the TiN electrode during the electroforming and set processes. On the other hand, the oxygen ions in the TiN electrode diffused out and reacted with oxygen vacancies in the TiO2 film during the reset process, and the device changed from the LRS to the high-resistance state (HRS). Conduction in the LRS and HRS can be attributed to Ohmic conduction and the trap controlled space charged limited mechanism, respectively.

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