Bistable voltage transition using spin-orbit interaction in a ferromagnet-semiconductor hybrid structure

Hyun Cheol Koo, Hyunjung Yi, Joonyeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A traveling electron in the high mobility layer with asymmetric charge distribution induces an effective magnetic field that creates an imbalance of spin-up and spin-down energy levels. If a ferromagnet contacts a two-dimensional electron gas layer, the potential depends on the magnetization direction of the ferromagnetic detector. Two different potential levels can be assigned to "0" and "1" states of nonvolatile memory. This new concept of nonvolatile memory using spin-orbit interaction does not need complex magnetic tunneling layers and additional word writing lines.

Original languageEnglish
Article number4455702
Pages (from-to)419-422
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number3
DOIs
Publication statusPublished - 2008 Mar 1
Externally publishedYes

Keywords

  • Magnetic memories
  • Spin imbalance
  • Spin-orbit interaction
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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