Black phosphorus nonvolatile transistor memory

Dain Lee, Yongsuk Choi, Euyheon Hwang, Moon Sung Kang, Seungwoo Lee, Jeong Ho Cho

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10 4 s), and cyclic endurance (1000 cycles).

Original languageEnglish
Pages (from-to)9107-9112
Number of pages6
JournalNanoscale
Volume8
Issue number17
DOIs
Publication statusPublished - 2016 May 7
Externally publishedYes

Fingerprint

Phosphorus
Transistors
Data storage equipment
Gates (transistor)
Charge trapping
Gold
Durability
Nanoparticles

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Lee, D., Choi, Y., Hwang, E., Kang, M. S., Lee, S., & Cho, J. H. (2016). Black phosphorus nonvolatile transistor memory. Nanoscale, 8(17), 9107-9112. https://doi.org/10.1039/c6nr02078j

Black phosphorus nonvolatile transistor memory. / Lee, Dain; Choi, Yongsuk; Hwang, Euyheon; Kang, Moon Sung; Lee, Seungwoo; Cho, Jeong Ho.

In: Nanoscale, Vol. 8, No. 17, 07.05.2016, p. 9107-9112.

Research output: Contribution to journalArticle

Lee, D, Choi, Y, Hwang, E, Kang, MS, Lee, S & Cho, JH 2016, 'Black phosphorus nonvolatile transistor memory', Nanoscale, vol. 8, no. 17, pp. 9107-9112. https://doi.org/10.1039/c6nr02078j
Lee D, Choi Y, Hwang E, Kang MS, Lee S, Cho JH. Black phosphorus nonvolatile transistor memory. Nanoscale. 2016 May 7;8(17):9107-9112. https://doi.org/10.1039/c6nr02078j
Lee, Dain ; Choi, Yongsuk ; Hwang, Euyheon ; Kang, Moon Sung ; Lee, Seungwoo ; Cho, Jeong Ho. / Black phosphorus nonvolatile transistor memory. In: Nanoscale. 2016 ; Vol. 8, No. 17. pp. 9107-9112.
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