Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy

Jong Bin Kim, Young Soo No, Dong Jin Byun, Dong Hee Park, Won Kook Choi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2- Zn and V- Zn, respectively.

Original languageEnglish
Pages (from-to)281-287
Number of pages7
JournalKorean Journal of Materials Research
Volume19
Issue number5
DOIs
Publication statusPublished - 2009 Aug 18

Fingerprint

Molecular beam epitaxy
Luminescence
Plasmas
Thin films
Local density approximation
Electron transitions
Zinc
Aluminum Oxide
Oxygen vacancies
Conduction bands
Sapphire
Vacancies
Single crystals
Oxygen
Defects
Substrates

Keywords

  • Blue luminescence
  • Oxygen vacancy
  • Plasma-assisted molecular beam epitaxy
  • Zn vacancy
  • ZnO thin film

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy. / Kim, Jong Bin; No, Young Soo; Byun, Dong Jin; Park, Dong Hee; Choi, Won Kook.

In: Korean Journal of Materials Research, Vol. 19, No. 5, 18.08.2009, p. 281-287.

Research output: Contribution to journalArticle

Kim, Jong Bin ; No, Young Soo ; Byun, Dong Jin ; Park, Dong Hee ; Choi, Won Kook. / Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy. In: Korean Journal of Materials Research. 2009 ; Vol. 19, No. 5. pp. 281-287.
@article{06e3b461b27a46ee962b1b20fd19fa18,
title = "Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy",
abstract = "ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2- Zn and V- Zn, respectively.",
keywords = "Blue luminescence, Oxygen vacancy, Plasma-assisted molecular beam epitaxy, Zn vacancy, ZnO thin film",
author = "Kim, {Jong Bin} and No, {Young Soo} and Byun, {Dong Jin} and Park, {Dong Hee} and Choi, {Won Kook}",
year = "2009",
month = "8",
day = "18",
doi = "10.3740/MRSK.2009.19.5.281",
language = "English",
volume = "19",
pages = "281--287",
journal = "Korean Journal of Materials Research",
issn = "1225-0562",
publisher = "The Korea Federation of Science and Technology",
number = "5",

}

TY - JOUR

T1 - Blue luminescent center in undoped ZnO thin films grown by plasma-assisted molecular beam epitaxy

AU - Kim, Jong Bin

AU - No, Young Soo

AU - Byun, Dong Jin

AU - Park, Dong Hee

AU - Choi, Won Kook

PY - 2009/8/18

Y1 - 2009/8/18

N2 - ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2- Zn and V- Zn, respectively.

AB - ZnO thin film was grown on a sapphire single crystal substrate by plasma assisted molecular beam epitaxy. In addition to near band edge (NBE) emissions, both blue and green luminescences are also observed together. The PL intensity of the blue luminescence (BL) range from 2.7 to 2.9 eV increased as the amount of activated oxygen increased, but green luminescence (GL) was weakly observed at about 2.4 eV without much change in intensity. This result is quite unlike previous studies in which BL and GL were regarded as the transition between shallow donor levels such as oxygen vacancy and interstitial zinc. Based on the transition level and formation energy of the ZnO intrinsic defects predicted through the first principle calculation, which employs density functional approximation (DFA) revised by local density approximation (LDA) and the LDA+U approach, the green and blue luminescence are nearly coincident with the transition from the conduction band to zinc vacancies of V2- Zn and V- Zn, respectively.

KW - Blue luminescence

KW - Oxygen vacancy

KW - Plasma-assisted molecular beam epitaxy

KW - Zn vacancy

KW - ZnO thin film

UR - http://www.scopus.com/inward/record.url?scp=68549122914&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68549122914&partnerID=8YFLogxK

U2 - 10.3740/MRSK.2009.19.5.281

DO - 10.3740/MRSK.2009.19.5.281

M3 - Article

AN - SCOPUS:68549122914

VL - 19

SP - 281

EP - 287

JO - Korean Journal of Materials Research

JF - Korean Journal of Materials Research

SN - 1225-0562

IS - 5

ER -