Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells

Ji Eun Lee, Seung Kyu Ahn, Joo Hyung Park, Jinsu Yoo, Kyung Hoon Yoon, Donghwan Kim, Jun Sik Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si - C bond density in the p-nc-SiC:H films increased from 5.20 × 1019 to 7.07 × 1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p-nc-Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3-15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC:H films deposited at RH = 220 were applied in the nc-Si:H solar cells, a high conversion efficiency of 8.26% (Voc = 0.53 V, Jsc = 23.98 mA/cm2 and FF = 0.65) was obtained compared to 6.36% (Voc = 0.44 V, Jsc = 21.90 mA/cm2 and FF = 0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC:H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03%.

Original languageEnglish
Pages (from-to)1715-1723
Number of pages9
JournalProgress in Photovoltaics: Research and Applications
Volume23
Issue number12
DOIs
Publication statusPublished - 2015 Dec 1

Fingerprint

Nanocrystalline silicon
silicon alloys
Nanocrystallites
Boron
Silicon solar cells
Silicon
Silicon carbide
silicon carbides
boron
solar cells
silicon
thin films
Solar cells
Conversion efficiency
Energy gap
augmentation
Plasma enhanced chemical vapor deposition
Thin film solar cells
silicon carbide
Dilution

Keywords

  • conversion efficiency
  • nanocrystallites
  • silicon carbide
  • silicon thin-film
  • solar cell

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells. / Lee, Ji Eun; Ahn, Seung Kyu; Park, Joo Hyung; Yoo, Jinsu; Yoon, Kyung Hoon; Kim, Donghwan; Cho, Jun Sik.

In: Progress in Photovoltaics: Research and Applications, Vol. 23, No. 12, 01.12.2015, p. 1715-1723.

Research output: Contribution to journalArticle

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abstract = "Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si - C bond density in the p-nc-SiC:H films increased from 5.20 × 1019 to 7.07 × 1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p-nc-Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3-15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC:H films deposited at RH = 220 were applied in the nc-Si:H solar cells, a high conversion efficiency of 8.26{\%} (Voc = 0.53 V, Jsc = 23.98 mA/cm2 and FF = 0.65) was obtained compared to 6.36{\%} (Voc = 0.44 V, Jsc = 21.90 mA/cm2 and FF = 0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC:H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03{\%}.",
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T1 - Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites for highly efficient nanocrystalline silicon thin-film solar cells

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AU - Park, Joo Hyung

AU - Yoo, Jinsu

AU - Yoon, Kyung Hoon

AU - Kim, Donghwan

AU - Cho, Jun Sik

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AB - Boron-doped hydrogenated silicon carbide alloys containing silicon nanocrystallites (p-nc-SiC:H) were prepared using a plasma-enhanced chemical vapor deposition system with a mixture of CH4, SiH4, B2H6 and H2 gases. The influence of hydrogen dilution on the material properties of the p-nc-SiC:H films was investigated, and their roles as window layers in hydrogenated nanocrystalline silicon (nc-Si:H) solar cells were examined. By increasing the RH (H2/SiH4) ratio from 90 to 220, the Si - C bond density in the p-nc-SiC:H films increased from 5.20 × 1019 to 7.07 × 1019/cm3, resulting in a significant increase of the bandgap from 2.09 to 2.23 eV in comparison with the bandgap of 1.95 eV for p-nc-Si:H films. For the films deposited at a high RH ratio, the Si nanocrystallites with a size of 3-15 nm were formed in the amorphous SiC:H matrix. The Si nanocrystallites played an important role in the enhancement of vertical charge transport in the p-nc-SiC:H films, which was verified by conductive atomic force microscopy measurements. When the p-nc-SiC:H films deposited at RH = 220 were applied in the nc-Si:H solar cells, a high conversion efficiency of 8.26% (Voc = 0.53 V, Jsc = 23.98 mA/cm2 and FF = 0.65) was obtained compared to 6.36% (Voc = 0.44 V, Jsc = 21.90 mA/cm2 and FF = 0.66) of the solar cells with reference p-nc-Si:H films. Further enhancement in the cell performance was achieved using p-nc-SiC:H bilayers consisting of highly doped upper layers and low-level doped bottom layers, which led to the increased conversion efficiency of 9.03%.

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