Boron nitride substrates for high-quality graphene electronics

C. R. Dean, A. F. Young, I. Meric, Chul-Ho Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, J. Hone

Research output: Contribution to journalArticle

3667 Citations (Scopus)

Abstract

Graphene devices on standard SiO 2 substrates are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. Although suspending the graphene above the substrate leads to a substantial improvement in device quality, this geometry imposes severe limitations on device architecture and functionality. There is a growing need, therefore, to identify dielectrics that allow a substrate-supported geometry while retaining the quality achieved with a suspended sample. Hexagonal boron nitride (h-BN) is an appealing substrate, because it has an atomically smooth surface that is relatively free of dangling bonds and charge traps. It also has a lattice constant similar to that of graphite, and has large optical phonon modes and a large electrical bandgap. Here we report the fabrication and characterization of high-quality exfoliated mono-and bilayer graphene devices on single-crystal h-BN substrates, by using a mechanical transfer process. Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO2. These devices also show reduced roughness, intrinsic doping and chemical reactivity. The ability to assemble crystalline layered materials in a controlled way permits the fabrication of graphene devices on other promising dielectrics and allows for the realization of more complex graphene heterostructures.

Original languageEnglish
Pages (from-to)722-726
Number of pages5
JournalNature Nanotechnology
Volume5
Issue number10
DOIs
Publication statusPublished - 2010 Oct
Externally publishedYes

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Boron nitride
boron nitrides
Graphene
graphene
Electronic equipment
Equipment and Supplies
Substrates
electronics
Fabrication
Chemical reactivity
Dangling bonds
Mechanical Phenomena
Geometry
Phonons
fabrication
Lattice constants
Heterojunctions
boron nitride
Energy gap

ASJC Scopus subject areas

  • Bioengineering
  • Biomedical Engineering
  • Materials Science(all)
  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics

Cite this

Dean, C. R., Young, A. F., Meric, I., Lee, C-H., Wang, L., Sorgenfrei, S., ... Hone, J. (2010). Boron nitride substrates for high-quality graphene electronics. Nature Nanotechnology, 5(10), 722-726. https://doi.org/10.1038/nnano.2010.172

Boron nitride substrates for high-quality graphene electronics. / Dean, C. R.; Young, A. F.; Meric, I.; Lee, Chul-Ho; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; Hone, J.

In: Nature Nanotechnology, Vol. 5, No. 10, 10.2010, p. 722-726.

Research output: Contribution to journalArticle

Dean, CR, Young, AF, Meric, I, Lee, C-H, Wang, L, Sorgenfrei, S, Watanabe, K, Taniguchi, T, Kim, P, Shepard, KL & Hone, J 2010, 'Boron nitride substrates for high-quality graphene electronics', Nature Nanotechnology, vol. 5, no. 10, pp. 722-726. https://doi.org/10.1038/nnano.2010.172
Dean, C. R. ; Young, A. F. ; Meric, I. ; Lee, Chul-Ho ; Wang, L. ; Sorgenfrei, S. ; Watanabe, K. ; Taniguchi, T. ; Kim, P. ; Shepard, K. L. ; Hone, J. / Boron nitride substrates for high-quality graphene electronics. In: Nature Nanotechnology. 2010 ; Vol. 5, No. 10. pp. 722-726.
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