Bosonization theory of excitons in one-dimensional narrow-gap semiconductors

H. C. Lee, Sung Ryul Yang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Excitons in one-dimensional narrow-gap semiconductors of anticrossing quantum Hall edge states are investigated using a bosonization method. The excitonic states are studied by mapping the problem into a nonintegrable sine Gordon type model. We also find that many-body interactions lead to a strong enhancement of the band gap. We have estimated when an exciton instability may occur.

Original languageEnglish
Article number193308
Pages (from-to)1933081-1933084
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume63
Issue number19
Publication statusPublished - 2001 Aug 15

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Excitons
excitons
Semiconductor materials
Energy gap
augmentation
interactions
LDS 751

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Bosonization theory of excitons in one-dimensional narrow-gap semiconductors. / Lee, H. C.; Yang, Sung Ryul.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 63, No. 19, 193308, 15.08.2001, p. 1933081-1933084.

Research output: Contribution to journalArticle

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