Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

Hyunsuk Kim, Kyoungah Cho, Dong Won Kim, Hye Ryoung Lee, Sangsig Kim

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Abstract

Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

Original languageEnglish
Article number173107
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
Publication statusPublished - 2006 Nov 6

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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