Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals

Hyunsuk Kim, Kyoungah Cho, Dong Won Kim, Hye Ryoung Lee, Sangsig Kim

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Sintered HgTe nanocrystal-based thin-film transistors (TFTs) with bottom- and top-gate geometries were fabricated at a temperature of 150 °C by spin coating in this work. The Si O2 bottom- and Al2 O3 top-gate field-effect TFTs with p channels composed of sintered HgTe nanocrystals exhibit high carrier mobilities of 0.82 and 2.38 cm2 V s, respectively. The operating gate voltages for the top-gate transistor with an Al2 O3 dielectric layer are actually lower, compared with the Si O2 bottom-gate transistor. The electrical characteristics of these TFTs are discussed in more detail in this letter.

Original languageEnglish
Article number173107
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
Publication statusPublished - 2006 Nov 6

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nanocrystals
transistors
thin films
carrier mobility
coating
electric potential
geometry
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals. / Kim, Hyunsuk; Cho, Kyoungah; Kim, Dong Won; Lee, Hye Ryoung; Kim, Sangsig.

In: Applied Physics Letters, Vol. 89, No. 17, 173107, 06.11.2006.

Research output: Contribution to journalArticle

Kim, Hyunsuk ; Cho, Kyoungah ; Kim, Dong Won ; Lee, Hye Ryoung ; Kim, Sangsig. / Bottom- and top-gate field-effect thin-film transistors with p channels of sintered HgTe nanocrystals. In: Applied Physics Letters. 2006 ; Vol. 89, No. 17.
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