Broadband low reflectance stepped-cone nanostructures by nanosphere lithography

Janghyuk Kim, Byung Jae Kim, Ji Hyun Kim, Suyeon Lee, Q Han Park

Research output: Contribution to journalArticle

Abstract

The authors demonstrated broadband low reflectance through a two-step surface texturing technique that combines nanosphere lithography with dry-etching. Through this, various stepped-cone nanostructures were fabricated on the surface of GaAs to suppress its reflectance, with the shape and height of these nanostructures being precisely controlled by altering the diameter of the etch mask (SiO2 nanospheres) and the etching time. The effects of this stepped-cone nanostructure were analyzed by measuring its reflectance spectra in conjunction with finite-difference time-domain calculations. This found that the average reflectance at wavelengths of 300-2500nm is reduced from 38.1% to 2.6% due to enhanced light scattering and a gradual change in refractive index. This novel method is therefore considered to represent an easily scalable approach to fabricating broadband antireflective surfaces for solar cell applications.

Original languageEnglish
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume33
Issue number2
DOIs
Publication statusPublished - 2015 Mar 1

Fingerprint

Nanospheres
Lithography
Cones
Nanostructures
cones
lithography
broadband
reflectance
etching
Dry etching
Texturing
Light scattering
Masks
Etching
Refractive index
Solar cells
light scattering
masks
solar cells
refractivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Broadband low reflectance stepped-cone nanostructures by nanosphere lithography. / Kim, Janghyuk; Kim, Byung Jae; Kim, Ji Hyun; Lee, Suyeon; Park, Q Han.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 33, No. 2, 01.03.2015.

Research output: Contribution to journalArticle

@article{abfcf2cd4c3648a3a195bf3083dd666c,
title = "Broadband low reflectance stepped-cone nanostructures by nanosphere lithography",
abstract = "The authors demonstrated broadband low reflectance through a two-step surface texturing technique that combines nanosphere lithography with dry-etching. Through this, various stepped-cone nanostructures were fabricated on the surface of GaAs to suppress its reflectance, with the shape and height of these nanostructures being precisely controlled by altering the diameter of the etch mask (SiO2 nanospheres) and the etching time. The effects of this stepped-cone nanostructure were analyzed by measuring its reflectance spectra in conjunction with finite-difference time-domain calculations. This found that the average reflectance at wavelengths of 300-2500nm is reduced from 38.1{\%} to 2.6{\%} due to enhanced light scattering and a gradual change in refractive index. This novel method is therefore considered to represent an easily scalable approach to fabricating broadband antireflective surfaces for solar cell applications.",
author = "Janghyuk Kim and Kim, {Byung Jae} and Kim, {Ji Hyun} and Suyeon Lee and Park, {Q Han}",
year = "2015",
month = "3",
day = "1",
doi = "10.1116/1.4913194",
language = "English",
volume = "33",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "2",

}

TY - JOUR

T1 - Broadband low reflectance stepped-cone nanostructures by nanosphere lithography

AU - Kim, Janghyuk

AU - Kim, Byung Jae

AU - Kim, Ji Hyun

AU - Lee, Suyeon

AU - Park, Q Han

PY - 2015/3/1

Y1 - 2015/3/1

N2 - The authors demonstrated broadband low reflectance through a two-step surface texturing technique that combines nanosphere lithography with dry-etching. Through this, various stepped-cone nanostructures were fabricated on the surface of GaAs to suppress its reflectance, with the shape and height of these nanostructures being precisely controlled by altering the diameter of the etch mask (SiO2 nanospheres) and the etching time. The effects of this stepped-cone nanostructure were analyzed by measuring its reflectance spectra in conjunction with finite-difference time-domain calculations. This found that the average reflectance at wavelengths of 300-2500nm is reduced from 38.1% to 2.6% due to enhanced light scattering and a gradual change in refractive index. This novel method is therefore considered to represent an easily scalable approach to fabricating broadband antireflective surfaces for solar cell applications.

AB - The authors demonstrated broadband low reflectance through a two-step surface texturing technique that combines nanosphere lithography with dry-etching. Through this, various stepped-cone nanostructures were fabricated on the surface of GaAs to suppress its reflectance, with the shape and height of these nanostructures being precisely controlled by altering the diameter of the etch mask (SiO2 nanospheres) and the etching time. The effects of this stepped-cone nanostructure were analyzed by measuring its reflectance spectra in conjunction with finite-difference time-domain calculations. This found that the average reflectance at wavelengths of 300-2500nm is reduced from 38.1% to 2.6% due to enhanced light scattering and a gradual change in refractive index. This novel method is therefore considered to represent an easily scalable approach to fabricating broadband antireflective surfaces for solar cell applications.

UR - http://www.scopus.com/inward/record.url?scp=84923886895&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923886895&partnerID=8YFLogxK

U2 - 10.1116/1.4913194

DO - 10.1116/1.4913194

M3 - Article

AN - SCOPUS:84923886895

VL - 33

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 2

ER -