Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate

Yujin Jeong, Hakjoon Lee, Sangyeop Lee, Taehee Yoo, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalSolid State Communications
Volume200
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Magnetic anisotropy
Buffer layers
Anisotropy
buffers
anisotropy
Substrates
Hall effect
Molecular beam epitaxy
Anions
Buffers
Negative ions
gallium arsenide
Crystalline materials
molecular beam epitaxy
anions
symmetry
Direction compound

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Chemistry

Cite this

Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate. / Jeong, Yujin; Lee, Hakjoon; Lee, Sangyeop; Yoo, Taehee; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Solid State Communications, Vol. 200, 01.01.2014, p. 1-4.

Research output: Contribution to journalArticle

Jeong, Yujin ; Lee, Hakjoon ; Lee, Sangyeop ; Yoo, Taehee ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate. In: Solid State Communications. 2014 ; Vol. 200. pp. 1-4.
@article{77c5e385defd40a19cad4d2c3614efec,
title = "Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate",
abstract = "The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.",
keywords = "A. Ferromagnetism, D. Magnetic anisotropy, D. Planar Hall effect",
author = "Yujin Jeong and Hakjoon Lee and Sangyeop Lee and Taehee Yoo and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2014",
month = "1",
day = "1",
doi = "10.1016/j.ssc.2014.09.009",
language = "English",
volume = "200",
pages = "1--4",
journal = "Solid State Communications",
issn = "0038-1098",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate

AU - Jeong, Yujin

AU - Lee, Hakjoon

AU - Lee, Sangyeop

AU - Yoo, Taehee

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.

AB - The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.

KW - A. Ferromagnetism

KW - D. Magnetic anisotropy

KW - D. Planar Hall effect

UR - http://www.scopus.com/inward/record.url?scp=84908265421&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908265421&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2014.09.009

DO - 10.1016/j.ssc.2014.09.009

M3 - Article

AN - SCOPUS:84908265421

VL - 200

SP - 1

EP - 4

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

ER -