Abstract
The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.
| Original language | English |
|---|---|
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 200 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Chemistry
Cite this
Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate. / Jeong, Yujin; Lee, Hakjoon; Lee, Sangyeop; Yoo, Taehee; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.
In: Solid State Communications, Vol. 200, 01.01.2014, p. 1-4.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Buffer layer dependence of magnetic anisotropy in Fe films grown GaAs substrate
AU - Jeong, Yujin
AU - Lee, Hakjoon
AU - Lee, Sangyeop
AU - Yoo, Taehee
AU - Lee, Sang Hoon
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.
AB - The effect of buffer layer on the magnetic anisotropy of Fe film has been investigated by using the planar Hall effect measurement. The Fe films were grown on four different buffer layers, such as GaAs, ZnSe, ZnTe, and Ge, by molecular beam epitaxy. The field and angle dependent planar Hall effect measurements revealed the presence of two types of magnetic anisotropies, i.e., cubic crystalline anisotropy along the <100> directions and uniaxial anisotropy along the <100> crystallographic directions, in all four Fe films investigated in the study. However, the relative strength of the two types of anisotropies varies significantly depending on the type of buffer layer. Specially, in the Fe film grown on the Ge buffer layer, the uniaxial anisotropy almost disappeared and the entire magnetic anisotropy was dominated by cubic anisotropy with a four-fold symmetry. This suggests that the growth of Fe film on the Ge surface is different from its growth on other surfaces such as GaAs, ZnSe, and ZnTe buffers, where the asymmetric reconstruction process of anions (i.e., As, Se, or Te) is present at the surface.
KW - A. Ferromagnetism
KW - D. Magnetic anisotropy
KW - D. Planar Hall effect
UR - http://www.scopus.com/inward/record.url?scp=84908265421&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908265421&partnerID=8YFLogxK
U2 - 10.1016/j.ssc.2014.09.009
DO - 10.1016/j.ssc.2014.09.009
M3 - Article
AN - SCOPUS:84908265421
VL - 200
SP - 1
EP - 4
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
ER -