Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

Byung Jae Kim, Chongmin Lee, Michael A. Mastro, Jennifer K. Hite, Charles R. Eddy, Fan Ren, Stephen J. Pearton, Ji Hyun Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiN X passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiN X by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs.

Original languageEnglish
Article number031108
JournalApplied Physics Letters
Volume101
Issue number3
DOIs
Publication statusPublished - 2012 Jul 16

Fingerprint

ultraviolet radiation
graphene
light emitting diodes
electrodes
oxidation
operating temperature
luminous intensity
passivity
vapor deposition
degradation
conduction
output
carbon
defects
electric potential
oxygen
atoms
molecules

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, B. J., Lee, C., Mastro, M. A., Hite, J. K., Eddy, C. R., Ren, F., ... Kim, J. H. (2012). Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes. Applied Physics Letters, 101(3), [031108]. https://doi.org/10.1063/1.4733981

Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes. / Kim, Byung Jae; Lee, Chongmin; Mastro, Michael A.; Hite, Jennifer K.; Eddy, Charles R.; Ren, Fan; Pearton, Stephen J.; Kim, Ji Hyun.

In: Applied Physics Letters, Vol. 101, No. 3, 031108, 16.07.2012.

Research output: Contribution to journalArticle

Kim, BJ, Lee, C, Mastro, MA, Hite, JK, Eddy, CR, Ren, F, Pearton, SJ & Kim, JH 2012, 'Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes', Applied Physics Letters, vol. 101, no. 3, 031108. https://doi.org/10.1063/1.4733981
Kim BJ, Lee C, Mastro MA, Hite JK, Eddy CR, Ren F et al. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes. Applied Physics Letters. 2012 Jul 16;101(3). 031108. https://doi.org/10.1063/1.4733981
Kim, Byung Jae ; Lee, Chongmin ; Mastro, Michael A. ; Hite, Jennifer K. ; Eddy, Charles R. ; Ren, Fan ; Pearton, Stephen J. ; Kim, Ji Hyun. / Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes. In: Applied Physics Letters. 2012 ; Vol. 101, No. 3.
@article{b1835780b56d4729badf567054b7e2d9,
title = "Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes",
abstract = "We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiN X passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiN X by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs.",
author = "Kim, {Byung Jae} and Chongmin Lee and Mastro, {Michael A.} and Hite, {Jennifer K.} and Eddy, {Charles R.} and Fan Ren and Pearton, {Stephen J.} and Kim, {Ji Hyun}",
year = "2012",
month = "7",
day = "16",
doi = "10.1063/1.4733981",
language = "English",
volume = "101",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "3",

}

TY - JOUR

T1 - Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes

AU - Kim, Byung Jae

AU - Lee, Chongmin

AU - Mastro, Michael A.

AU - Hite, Jennifer K.

AU - Eddy, Charles R.

AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Kim, Ji Hyun

PY - 2012/7/16

Y1 - 2012/7/16

N2 - We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiN X passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiN X by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs.

AB - We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiN X passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiN X by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs.

UR - http://www.scopus.com/inward/record.url?scp=84864261690&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864261690&partnerID=8YFLogxK

U2 - 10.1063/1.4733981

DO - 10.1063/1.4733981

M3 - Article

AN - SCOPUS:84864261690

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 031108

ER -