Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles

Byoungjun Park, Kyoungah Cho, Hyunsuk Kim, Sangsig Kim

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.

Original languageEnglish
Article number025
Pages (from-to)975-978
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number7
DOIs
Publication statusPublished - 2006 Jul 1

Fingerprint

metal oxide semiconductors
Gold
capacitors
Capacitors
Capacitance
capacitance
Metals
gold
Nanoparticles
nanoparticles
Electric potential
electric potential
Hysteresis
curves
hysteresis
Electrons
shift
Oxides
floating
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles. / Park, Byoungjun; Cho, Kyoungah; Kim, Hyunsuk; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 21, No. 7, 025, 01.07.2006, p. 975-978.

Research output: Contribution to journalArticle

@article{2fcab9c250b84a22af615429e1c099d9,
title = "Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles",
abstract = "In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.",
author = "Byoungjun Park and Kyoungah Cho and Hyunsuk Kim and Sangsig Kim",
year = "2006",
month = "7",
day = "1",
doi = "10.1088/0268-1242/21/7/025",
language = "English",
volume = "21",
pages = "975--978",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles

AU - Park, Byoungjun

AU - Cho, Kyoungah

AU - Kim, Hyunsuk

AU - Kim, Sangsig

PY - 2006/7/1

Y1 - 2006/7/1

N2 - In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.

AB - In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.

UR - http://www.scopus.com/inward/record.url?scp=33745284580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745284580&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/7/025

DO - 10.1088/0268-1242/21/7/025

M3 - Article

AN - SCOPUS:33745284580

VL - 21

SP - 975

EP - 978

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 025

ER -