Abstract
In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.
| Original language | English |
|---|---|
| Article number | 025 |
| Pages (from-to) | 975-978 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 21 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2006 Jul 1 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles. / Park, Byoungjun; Cho, Kyoungah; Kim, Hyunsuk; Kim, Sangsig.
In: Semiconductor Science and Technology, Vol. 21, No. 7, 025, 01.07.2006, p. 975-978.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Capacitance characteristics of MOS capacitors embedded with colloidally synthesized gold nanoparticles
AU - Park, Byoungjun
AU - Cho, Kyoungah
AU - Kim, Hyunsuk
AU - Kim, Sangsig
PY - 2006/7/1
Y1 - 2006/7/1
N2 - In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.
AB - In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.
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UR - http://www.scopus.com/inward/citedby.url?scp=33745284580&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/21/7/025
DO - 10.1088/0268-1242/21/7/025
M3 - Article
AN - SCOPUS:33745284580
VL - 21
SP - 975
EP - 978
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
M1 - 025
ER -