Abstract
In this work, the capacitance characteristics of gold nanoparticle-embedded metal-oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The capacitance versus voltage (C-V) curves obtained for a representative MOS capacitor embedded with gold nanoparticles synthesized by the colloidal method exhibit large flat-band voltage shifts, which indicate the presence of charge storages in the gold nanoparticles. Their hysteresis characteristics are dependent on the voltage sweep range. The clockwise hysteresis and rightward shift of the flat band voltages observed from the C-V curves imply that electrons are trapped in a floating gate layer consisting of the gold nanoparticles present between SiO2 and Al2O3 layers in the MOS capacitor, and that these trapped electrons originate from the top electrode. In addition, the characteristics of the capacitance versus time curves for the gold nanoparticle-embedded MOS capacitor are discussed in this paper.
| Original language | English |
|---|---|
| Article number | 025 |
| Pages (from-to) | 975-978 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 21 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2006 Jul 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry