Abstract
The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.
Original language | English |
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Article number | 253502 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)