Abstract
The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.
| Original language | English |
|---|---|
| Article number | 253502 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2005 Sep 13 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. / Kang, B. S.; Kim, Ji Hyun; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N G; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.
In: Applied Physics Letters, Vol. 86, No. 25, 253502, 13.09.2005, p. 1-3.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane
AU - Kang, B. S.
AU - Kim, Ji Hyun
AU - Jang, S.
AU - Ren, F.
AU - Johnson, J. W.
AU - Therrien, R. J.
AU - Rajagopal, P.
AU - Roberts, J. C.
AU - Piner, E. L.
AU - Linthicum, K. J.
AU - Chu, S. N G
AU - Baik, K.
AU - Gila, B. P.
AU - Abernathy, C. R.
AU - Pearton, S. J.
PY - 2005/9/13
Y1 - 2005/9/13
N2 - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.
AB - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.
UR - http://www.scopus.com/inward/record.url?scp=24344445315&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=24344445315&partnerID=8YFLogxK
U2 - 10.1063/1.1952568
DO - 10.1063/1.1952568
M3 - Article
AN - SCOPUS:24344445315
VL - 86
SP - 1
EP - 3
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 25
M1 - 253502
ER -