Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang; J. Kim; S. Jang; F. Ren; J. W. Johnson; R. J. Therrien; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum; S. N.G. Chu; K. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton

doi:10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang, J. Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N.G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 ^-3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

Original language	English
Article number	253502
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/10.1063/1.1952568
Publication status	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., & Pearton, S. J. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86(25), 1-3. [253502]. https://doi.org/10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. / Kang, B. S.; Kim, J.; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N.G.; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

In: Applied Physics Letters, Vol. 86, No. 25, 253502, 2005, p. 1-3.

Research output: Contribution to journal › Article › peer-review

Kang, B. S. ; Kim, J. ; Jang, S. ; Ren, F. ; Johnson, J. W. ; Therrien, R. J. ; Rajagopal, P. ; Roberts, J. C. ; Piner, E. L. ; Linthicum, K. J. ; Chu, S. N.G. ; Baik, K. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. / Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. In: Applied Physics Letters. 2005 ; Vol. 86, No. 25. pp. 1-3.

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title = "Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane",

abstract = "The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.",

author = "Kang, {B. S.} and J. Kim and S. Jang and F. Ren and Johnson, {J. W.} and Therrien, {R. J.} and P. Rajagopal and Roberts, {J. C.} and Piner, {E. L.} and Linthicum, {K. J.} and Chu, {S. N.G.} and K. Baik and Gila, {B. P.} and Abernathy, {C. R.} and Pearton, {S. J.}",

note = "Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416 (L. Hess). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Kang, B. S.

AU - Kim, J.

AU - Jang, S.

AU - Ren, F.

AU - Johnson, J. W.

AU - Therrien, R. J.

AU - Rajagopal, P.

AU - Roberts, J. C.

AU - Piner, E. L.

AU - Linthicum, K. J.

AU - Chu, S. N.G.

AU - Baik, K.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pearton, S. J.

N1 - Funding Information: The work at UF is partially supported by AFOSR (F49620-02-1-0366, G. Witt, and F49620-03-1-0370), NSF (CTS-0301178, monitored by Dr. M. Burka and Dr. D. Senich), by NASA Kennedy Space Center Grant NAG 10-316 monitored by Mr. Daniel E. Fitch, ONR (N00014-98-1-02-04, H. B. Dietrich), and NSF DMR 0400416 (L. Hess). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2005

Y1 - 2005

N2 - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

AB - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

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