Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang, Ji Hyun Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N G Chu, K. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journalArticle

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Abstract

The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

Original languageEnglish
Article number253502
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number25
DOIs
Publication statusPublished - 2005 Sep 13
Externally publishedYes

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pressure sensors
high electron mobility transistors
capacitance
membranes
membrane structures
radii
hysteresis
sensitivity
sensors
room temperature
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kang, B. S., Kim, J. H., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., ... Pearton, S. J. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86(25), 1-3. [253502]. https://doi.org/10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. / Kang, B. S.; Kim, Ji Hyun; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N G; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

In: Applied Physics Letters, Vol. 86, No. 25, 253502, 13.09.2005, p. 1-3.

Research output: Contribution to journalArticle

Kang, BS, Kim, JH, Jang, S, Ren, F, Johnson, JW, Therrien, RJ, Rajagopal, P, Roberts, JC, Piner, EL, Linthicum, KJ, Chu, SNG, Baik, K, Gila, BP, Abernathy, CR & Pearton, SJ 2005, 'Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane', Applied Physics Letters, vol. 86, no. 25, 253502, pp. 1-3. https://doi.org/10.1063/1.1952568
Kang, B. S. ; Kim, Ji Hyun ; Jang, S. ; Ren, F. ; Johnson, J. W. ; Therrien, R. J. ; Rajagopal, P. ; Roberts, J. C. ; Piner, E. L. ; Linthicum, K. J. ; Chu, S. N G ; Baik, K. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. / Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. In: Applied Physics Letters. 2005 ; Vol. 86, No. 25. pp. 1-3.
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AU - Linthicum, K. J.

AU - Chu, S. N G

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