Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang; Ji Hyun Kim; S. Jang; F. Ren; J. W. Johnson; R. J. Therrien; P. Rajagopal; J. C. Roberts; E. L. Piner; K. J. Linthicum; S. N G Chu; K. Baik; B. P. Gila; C. R. Abernathy; S. J. Pearton

doi:10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang, Ji Hyun Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N G Chu, K. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton

Research output: Contribution to journal › Article

40 Citations (Scopus)

Abstract

The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 ^-3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

Original language	English
Article number	253502
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	25
DOIs	https://doi.org/10.1063/1.1952568
Publication status	Published - 2005 Sep 13
Externally published	Yes

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Kang, B. S., Kim, J. H., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., & Pearton, S. J. (2005). Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. Applied Physics Letters, 86(25), 1-3. [253502]. https://doi.org/10.1063/1.1952568

Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. / Kang, B. S.; Kim, Ji Hyun; Jang, S.; Ren, F.; Johnson, J. W.; Therrien, R. J.; Rajagopal, P.; Roberts, J. C.; Piner, E. L.; Linthicum, K. J.; Chu, S. N G; Baik, K.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

In: Applied Physics Letters, Vol. 86, No. 25, 253502, 13.09.2005, p. 1-3.

Research output: Contribution to journal › Article

Kang, B. S. ; Kim, Ji Hyun ; Jang, S. ; Ren, F. ; Johnson, J. W. ; Therrien, R. J. ; Rajagopal, P. ; Roberts, J. C. ; Piner, E. L. ; Linthicum, K. J. ; Chu, S. N G ; Baik, K. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J. / Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane. In: Applied Physics Letters. 2005 ; Vol. 86, No. 25. pp. 1-3.

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abstract = "The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.",

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AU - Chu, S. N G

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AB - The changes in the capacitance of the channel of an AlGaN/GaN high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate were measured during the application of both tensile and compressive strain through changes in the ambient pressure. The capacitance of the channel displays a change of 7.19±0.45 × 10 -3 pF/μm as a function of the radius of the membrane at a fixed pressure of +9.5 bar and exhibits a linear characteristic response between -0.5 and +1 bar with a sensitivity of 0.86 pF/bar for a 600 μm radius membrane. The hysteresis was 0.4% in the linear range. These AlGaN/GaN HEMT membrane-based sensors appear to be promising for both room-temperature and elevated-temperature pressure-sensing applications.

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10.1063/1.1952568