Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane

B. S. Kang, J. Kim, S. Jang, F. Ren, J. W. Johnson, R. J. Therrien, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum, S. N.G. Chu, K. Baik, B. P. Gila, C. R. Abernathy, S. J. Pearton

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Physics & Astronomy