Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material

Hye Ryoung Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge nanocrystals(NCs)-embedded MOS capacitors are characterized in this work using capacitance-voltage measurement. High-k dielectrics HfO2 are employed for the gate material in the MOS capacitors, and the C-V curves obtained from O2- and NH3-annealed HfO2 films are analyzed.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages432-433
Number of pages2
DOIs
Publication statusPublished - 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Keywords

  • Component
  • Ge NCs
  • HfO
  • Nano-floating gate
  • Nitridation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

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    Lee, H. R., Choi, S., Cho, K., & Kim, S. (2006). Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in HfO2 gate material. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 432-433). [4388802] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388802