Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

Hye Ryoung Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim

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Abstract

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO2 gate material for the application of NFGM.

Original languageEnglish
Pages (from-to)412-416
Number of pages5
JournalThin Solid Films
Volume516
Issue number2-4
DOIs
Publication statusPublished - 2007 Dec 3

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Keywords

  • Floating gate memory
  • Ge nanocrystals
  • ZrO

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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