Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

Hye Ryoung Lee, Samjong Choi, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO2 gate material for the application of NFGM.

Original languageEnglish
Pages (from-to)412-416
Number of pages5
JournalThin Solid Films
Volume516
Issue number2-4
DOIs
Publication statusPublished - 2007 Dec 3

Fingerprint

capacitance-voltage characteristics
metal oxide semiconductors
Nanocrystals
capacitors
nanocrystals
Capacitors
Capacitance
Metals
Electric potential
electric potential
capacitance
curves
Data storage equipment
Capacitance measurement
Oxide semiconductors
High resolution transmission electron microscopy
Bias voltage
Time measurement
Ion implantation
Hysteresis

Keywords

  • Floating gate memory
  • Ge nanocrystals
  • ZrO

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material. / Lee, Hye Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig.

In: Thin Solid Films, Vol. 516, No. 2-4, 03.12.2007, p. 412-416.

Research output: Contribution to journalArticle

Lee, Hye Ryoung ; Choi, Samjong ; Cho, Kyoungah ; Kim, Sangsig. / Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material. In: Thin Solid Films. 2007 ; Vol. 516, No. 2-4. pp. 412-416.
@article{52a1619b3f424c31ad6ba042a80e75ea,
title = "Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material",
abstract = "Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO2 gate material for the application of NFGM.",
keywords = "Floating gate memory, Ge nanocrystals, ZrO",
author = "Lee, {Hye Ryoung} and Samjong Choi and Kyoungah Cho and Sangsig Kim",
year = "2007",
month = "12",
day = "3",
doi = "10.1016/j.tsf.2007.07.008",
language = "English",
volume = "516",
pages = "412--416",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "2-4",

}

TY - JOUR

T1 - Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

AU - Lee, Hye Ryoung

AU - Choi, Samjong

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2007/12/3

Y1 - 2007/12/3

N2 - Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO2 gate material for the application of NFGM.

AB - Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO2 gate material for the application of NFGM.

KW - Floating gate memory

KW - Ge nanocrystals

KW - ZrO

UR - http://www.scopus.com/inward/record.url?scp=36049050046&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36049050046&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2007.07.008

DO - 10.1016/j.tsf.2007.07.008

M3 - Article

VL - 516

SP - 412

EP - 416

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 2-4

ER -