Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer

Samjong Choi, Byoungjun Park, Hyunsuk Kim, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Capacitance versus voltage (C-V) curves of Ge-nanocrystal (NC)-embedded MOS capacitors with and without a single capping Al2O3 layer are characterized in this work. C-V curves of the Ge-NC-embedded MOS capacitor with the Al2O3 layer are counterclockwise in the voltage sweeps, which indicates the presence of charge storages in the Ge NCs by the tunnelling of charge carriers between the Si substrate and the Ge NCs. In contrast, clockwise hysteresis of the C-V curves and leftward shifts of the flat band voltages are observed for the embedded MOS capacitor without the Al 2O3 layer. It is suggested here that the observed characteristics of the C-V curves are due to the charge trapping at oxygen vacancies within a SiO2 layer. In addition, the illumination of the white light enhances the lower capacitance part of the C-V hysteresis. The origin for the enhancement is discussed in this paper.

Original languageEnglish
Pages (from-to)378-381
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number3
DOIs
Publication statusPublished - 2006 Mar 1

Fingerprint

MOS capacitors
Nanocrystals
capacitors
nanocrystals
Capacitance
capacitance
Electric potential
electric potential
curves
Hysteresis
hysteresis
Charge trapping
Oxygen vacancies
Charge carriers
charge carriers
Lighting
illumination
trapping
augmentation
shift

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer. / Choi, Samjong; Park, Byoungjun; Kim, Hyunsuk; Cho, Kyoungah; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 21, No. 3, 01.03.2006, p. 378-381.

Research output: Contribution to journalArticle

Choi, Samjong ; Park, Byoungjun ; Kim, Hyunsuk ; Cho, Kyoungah ; Kim, Sangsig. / Capacitance-voltage characterization of Ge-nanocrystal-embedded MOS capacitors with a capping Al2O3 layer. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 3. pp. 378-381.
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