Abstract
We present a capacitive absolute pressure sensor with a large deflected diaphragm that was fabricated with a sealed vacuum cavity formed by removing handling silicon wafer and oxide layers from a SOI wafer after eutectic bonding of a silicon wafer to the SOI wafer. The deflected displacements of the diaphragm formed by the vacuum cavity in the fabricated sensor were similar to simulation results. This result was estimated because of the dense interface produced between cavity-formed Si and the top Si layer of the SOI wafer by the Si-Au eutectic bonding process. Initial capacitance values were about 2.18pF and 3.65pF under normal atmosphere, where the thicknesses of the diaphragm used to fabricate the vacuum cavity were 20μm and 30μm, respectively. Also, it was confirmed that the differences of capacitance value from 1000hPa to 5hPa were about 2.57pF and 5.35pF, respectively.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) |
| Pages | 618-621 |
| Number of pages | 4 |
| Volume | 2006 |
| Publication status | Published - 2006 Oct 24 |
| Event | 19th IEEE International Conference on Micro Electro Mechanical Systems - Istanbul, Turkey Duration: 2006 Jan 22 → 2006 Jan 26 |
Other
| Other | 19th IEEE International Conference on Micro Electro Mechanical Systems |
|---|---|
| Country | Turkey |
| City | Istanbul |
| Period | 06/1/22 → 06/1/26 |
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ASJC Scopus subject areas
- Mechanical Engineering
- Electrical and Electronic Engineering
- Control and Systems Engineering
Cite this
Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. / Lee, K. R.; Kim, K.; Kim, Y. K.; Park, H. D.; Choi, S. W.; Choi, W. B.; Ju, Byeong Kwon.
Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). Vol. 2006 2006. p. 618-621 1627875.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations
AU - Lee, K. R.
AU - Kim, K.
AU - Kim, Y. K.
AU - Park, H. D.
AU - Choi, S. W.
AU - Choi, W. B.
AU - Ju, Byeong Kwon
PY - 2006/10/24
Y1 - 2006/10/24
N2 - We present a capacitive absolute pressure sensor with a large deflected diaphragm that was fabricated with a sealed vacuum cavity formed by removing handling silicon wafer and oxide layers from a SOI wafer after eutectic bonding of a silicon wafer to the SOI wafer. The deflected displacements of the diaphragm formed by the vacuum cavity in the fabricated sensor were similar to simulation results. This result was estimated because of the dense interface produced between cavity-formed Si and the top Si layer of the SOI wafer by the Si-Au eutectic bonding process. Initial capacitance values were about 2.18pF and 3.65pF under normal atmosphere, where the thicknesses of the diaphragm used to fabricate the vacuum cavity were 20μm and 30μm, respectively. Also, it was confirmed that the differences of capacitance value from 1000hPa to 5hPa were about 2.57pF and 5.35pF, respectively.
AB - We present a capacitive absolute pressure sensor with a large deflected diaphragm that was fabricated with a sealed vacuum cavity formed by removing handling silicon wafer and oxide layers from a SOI wafer after eutectic bonding of a silicon wafer to the SOI wafer. The deflected displacements of the diaphragm formed by the vacuum cavity in the fabricated sensor were similar to simulation results. This result was estimated because of the dense interface produced between cavity-formed Si and the top Si layer of the SOI wafer by the Si-Au eutectic bonding process. Initial capacitance values were about 2.18pF and 3.65pF under normal atmosphere, where the thicknesses of the diaphragm used to fabricate the vacuum cavity were 20μm and 30μm, respectively. Also, it was confirmed that the differences of capacitance value from 1000hPa to 5hPa were about 2.57pF and 5.35pF, respectively.
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UR - http://www.scopus.com/inward/citedby.url?scp=33750093218&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33750093218
SN - 0780394755
SN - 9780780394759
VL - 2006
SP - 618
EP - 621
BT - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ER -