Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations

K. R. Lee, K. Kim, Y. K. Kim, H. D. Park, S. W. Choi, W. B. Choi, Byeong Kwon Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We present a capacitive absolute pressure sensor with a large deflected diaphragm that was fabricated with a sealed vacuum cavity formed by removing handling silicon wafer and oxide layers from a SOI wafer after eutectic bonding of a silicon wafer to the SOI wafer. The deflected displacements of the diaphragm formed by the vacuum cavity in the fabricated sensor were similar to simulation results. This result was estimated because of the dense interface produced between cavity-formed Si and the top Si layer of the SOI wafer by the Si-Au eutectic bonding process. Initial capacitance values were about 2.18pF and 3.65pF under normal atmosphere, where the thicknesses of the diaphragm used to fabricate the vacuum cavity were 20μm and 30μm, respectively. Also, it was confirmed that the differences of capacitance value from 1000hPa to 5hPa were about 2.57pF and 5.35pF, respectively.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Pages618-621
Number of pages4
Volume2006
Publication statusPublished - 2006 Oct 24
Event19th IEEE International Conference on Micro Electro Mechanical Systems - Istanbul, Turkey
Duration: 2006 Jan 222006 Jan 26

Other

Other19th IEEE International Conference on Micro Electro Mechanical Systems
CountryTurkey
CityIstanbul
Period06/1/2206/1/26

Fingerprint

Pressure sensors
Diaphragms
Vacuum
Silicon wafers
Silicon
Eutectics
Capacitance
Air
Silicon oxides
Sensors

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering
  • Control and Systems Engineering

Cite this

Lee, K. R., Kim, K., Kim, Y. K., Park, H. D., Choi, S. W., Choi, W. B., & Ju, B. K. (2006). Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS) (Vol. 2006, pp. 618-621). [1627875]

Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. / Lee, K. R.; Kim, K.; Kim, Y. K.; Park, H. D.; Choi, S. W.; Choi, W. B.; Ju, Byeong Kwon.

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). Vol. 2006 2006. p. 618-621 1627875.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, KR, Kim, K, Kim, YK, Park, HD, Choi, SW, Choi, WB & Ju, BK 2006, Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. in Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). vol. 2006, 1627875, pp. 618-621, 19th IEEE International Conference on Micro Electro Mechanical Systems, Istanbul, Turkey, 06/1/22.
Lee KR, Kim K, Kim YK, Park HD, Choi SW, Choi WB et al. Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. In Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). Vol. 2006. 2006. p. 618-621. 1627875
Lee, K. R. ; Kim, K. ; Kim, Y. K. ; Park, H. D. ; Choi, S. W. ; Choi, W. B. ; Ju, Byeong Kwon. / Capacitive absolute pressure sensor with vacuum cavity formed by bonding silicon to SOI wafer for upper air observations. Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS). Vol. 2006 2006. pp. 618-621
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