Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor

I. Nam, Byungsik Hong, M. Kim, J. Shin, I. Song, D. M. Kim, S. Hwang, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV.

Original languageEnglish
Article number233104
JournalApplied Physics Letters
Volume103
Issue number23
DOIs
Publication statusPublished - 2013 Dec 2

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porphyrins
nanowires
field effect transistors
traps
silicon
molecules
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor. / Nam, I.; Hong, Byungsik; Kim, M.; Shin, J.; Song, I.; Kim, D. M.; Hwang, S.; Kim, Sangsig.

In: Applied Physics Letters, Vol. 103, No. 23, 233104, 02.12.2013.

Research output: Contribution to journalArticle

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