Capacitive proximity sensor with negative capacitance generation technique

S. I. Cho, S. I. Lim, K. H. Baek, Soo-Won Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

An oscillator-based capacitive proximity sensor is presented. To improve the sensor's sensitivity by minimising the effect of parasitic capacitance, the proposed sensor employs a negative capacitance generation technique. The sensor is implemented with a standard 0.18m CMOS technology, and the measurement results show that frequency variation is about 1.4% at 5cm distance while only consuming an 85A current. The die area occupies 520 by 280m, and the size of an external sensing plate is 0.5 by 0.5cm.

Original languageEnglish
Pages (from-to)1409-1411
Number of pages3
JournalElectronics Letters
Volume48
Issue number22
DOIs
Publication statusPublished - 2012 Oct 25

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Proximity sensors
Capacitive sensors
Capacitance
Sensors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Capacitive proximity sensor with negative capacitance generation technique. / Cho, S. I.; Lim, S. I.; Baek, K. H.; Kim, Soo-Won.

In: Electronics Letters, Vol. 48, No. 22, 25.10.2012, p. 1409-1411.

Research output: Contribution to journalArticle

Cho, S. I. ; Lim, S. I. ; Baek, K. H. ; Kim, Soo-Won. / Capacitive proximity sensor with negative capacitance generation technique. In: Electronics Letters. 2012 ; Vol. 48, No. 22. pp. 1409-1411.
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