Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

Seong Jin Yun; Jeong Seok Kim; Yong Sin Kim

doi:10.1109/TCSII.2016.2628965

Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

Seong Jin Yun, Jeong Seok Kim, Yong Sin Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

Original language	English
Article number	7744496
Pages (from-to)	1147-1151
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TCSII.2016.2628965
Publication status	Published - 2017 Oct

Keywords

Low-dropout (LDO) regulator
negative capacitance
power supply rejection (PSR)

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TCSII.2016.2628965

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title = "Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM",

abstract = "The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.",

keywords = "Low-dropout (LDO) regulator, negative capacitance, power supply rejection (PSR)",

author = "Yun, {Seong Jin} and Kim, {Jeong Seok} and Kim, {Yong Sin}",

note = "Funding Information: Manuscript received September 6, 2016; revised November 7, 2016; accepted November 13, 2016. Date of publication November 15, 2016; date of current version September 25, 2017. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning under Grant NRF-2014R1A1A1003771 and in part by Samsung Electronics. This brief was recommended by Associate Editor H.-J. Chiu. Publisher Copyright: {\textcopyright} 2017 IEEE.",

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AU - Kim, Yong Sin

N1 - Funding Information: Manuscript received September 6, 2016; revised November 7, 2016; accepted November 13, 2016. Date of publication November 15, 2016; date of current version September 25, 2017. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning under Grant NRF-2014R1A1A1003771 and in part by Samsung Electronics. This brief was recommended by Associate Editor H.-J. Chiu. Publisher Copyright: © 2017 IEEE.

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N2 - The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

AB - The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

KW - Low-dropout (LDO) regulator

KW - negative capacitance

KW - power supply rejection (PSR)

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Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

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Keywords

ASJC Scopus subject areas

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