Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

Seong Jin Yun; Jeong Seok Kim; Yong Sin Kim

doi:10.1109/TCSII.2016.2628965

Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

Seong Jin Yun, Jeong Seok Kim, Yong Sin Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

Original language	English
Article number	7744496
Pages (from-to)	1147-1151
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TCSII.2016.2628965
Publication status	Published - 2017 Oct

Keywords

Low-dropout (LDO) regulator
negative capacitance
power supply rejection (PSR)

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TCSII.2016.2628965

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@article{9cae9bc02a164a74854e1206d4160d54,

title = "Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM",

abstract = "The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.",

keywords = "Low-dropout (LDO) regulator, negative capacitance, power supply rejection (PSR)",

author = "Yun, {Seong Jin} and Kim, {Jeong Seok} and Kim, {Yong Sin}",

note = "Funding Information: Manuscript received September 6, 2016; revised November 7, 2016; accepted November 13, 2016. Date of publication November 15, 2016; date of current version September 25, 2017. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning under Grant NRF-2014R1A1A1003771 and in part by Samsung Electronics. This brief was recommended by Associate Editor H.-J. Chiu. Publisher Copyright: {\textcopyright} 2017 IEEE.",

year = "2017",

month = oct,

doi = "10.1109/TCSII.2016.2628965",

language = "English",

volume = "64",

pages = "1147--1151",

journal = "IEEE Transactions on Circuits and Systems I: Regular Papers",

issn = "1549-8328",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

AU - Yun, Seong Jin

AU - Kim, Jeong Seok

AU - Kim, Yong Sin

N1 - Funding Information: Manuscript received September 6, 2016; revised November 7, 2016; accepted November 13, 2016. Date of publication November 15, 2016; date of current version September 25, 2017. This work was supported in part by the Basic Science Research Program through the National Research Foundation of Korea within the Ministry of Science, ICT and Future Planning under Grant NRF-2014R1A1A1003771 and in part by Samsung Electronics. This brief was recommended by Associate Editor H.-J. Chiu. Publisher Copyright: © 2017 IEEE.

PY - 2017/10

Y1 - 2017/10

N2 - The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

AB - The performance of switching devices such as display driver ICs is degraded by large power supply noise at switching frequencies from a few hundreds of kilohertz to a few megahertz. In order to minimize the power supply noise, a low-dropout (LDO) regulator with higher power supply rejection (PSR) is essential. In this brief, a capless LDO regulator with a negative capacitance circuit and voltage damper is proposed for enhancing PSR and figure of merit (FOM), respectively, in switching devices. The proposed LDO regulator is fabricated in a 0.18 μm CMOS. Measurement results show that the proposed LDO regulator achieves -76 dB PSR at 1 MHz and 96.3 fs FOM with a total on-chip capacitance of as small as 12.7 pF.

KW - Low-dropout (LDO) regulator

KW - negative capacitance

KW - power supply rejection (PSR)

UR - http://www.scopus.com/inward/record.url?scp=85030830391&partnerID=8YFLogxK

U2 - 10.1109/TCSII.2016.2628965

DO - 10.1109/TCSII.2016.2628965

M3 - Article

AN - SCOPUS:85030830391

VL - 64

SP - 1147

EP - 1151

JO - IEEE Transactions on Circuits and Systems I: Regular Papers

JF - IEEE Transactions on Circuits and Systems I: Regular Papers

SN - 1549-8328

IS - 10

M1 - 7744496

ER -

Capless LDO Regulator Achieving -76 dB PSR and 96.3 fs FOM

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Keywords

ASJC Scopus subject areas

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