Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

H. Suzuki, K. Nishimura, Haeseok Lee, Y. Ohshita, N. Kojima, M. Yamaguchi

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.

Original languageEnglish
Pages (from-to)5008-5011
Number of pages4
JournalThin Solid Films
Volume515
Issue number12
DOIs
Publication statusPublished - 2007 Apr 23
Externally publishedYes

Fingerprint

Chemical beam epitaxy
Growth temperature
epitaxy
Carbon
carbon
Surface reactions
surface reactions
Desorption
Electric properties
desorption
electrical properties
Crystals
Substrates
crystals

Keywords

  • Chemical beam epitaxy
  • Gallium arsenide nitride
  • Impurities
  • Temperature programmed desorption

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source. / Suzuki, H.; Nishimura, K.; Lee, Haeseok; Ohshita, Y.; Kojima, N.; Yamaguchi, M.

In: Thin Solid Films, Vol. 515, No. 12, 23.04.2007, p. 5008-5011.

Research output: Contribution to journalArticle

Suzuki, H. ; Nishimura, K. ; Lee, Haeseok ; Ohshita, Y. ; Kojima, N. ; Yamaguchi, M. / Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source. In: Thin Solid Films. 2007 ; Vol. 515, No. 12. pp. 5008-5011.
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