Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

H. Suzuki; K. Nishimura; H. S. Lee; Y. Ohshita; N. Kojima; M. Yamaguchi

doi:10.1016/j.tsf.2006.10.041

Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

H. Suzuki, K. Nishimura, H. S. Lee, Y. Ohshita, N. Kojima, M. Yamaguchi

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CH_x desorption. In the case of DMHy, N(CH₃)₂ is desorbed more readily than CH_x, therefore, the C concentration can then be reduced using DMHy.

Original language	English
Pages (from-to)	5008-5011
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	12
DOIs	https://doi.org/10.1016/j.tsf.2006.10.041
Publication status	Published - 2007 Apr 23

Keywords

Chemical beam epitaxy
Gallium arsenide nitride
Impurities
Temperature programmed desorption

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2006.10.041

Fingerprint Dive into the research topics of 'Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source'. Together they form a unique fingerprint.

Cite this

Suzuki, H., Nishimura, K., Lee, H. S., Ohshita, Y., Kojima, N., & Yamaguchi, M. (2007). Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source. Thin Solid Films, 515(12), 5008-5011. https://doi.org/10.1016/j.tsf.2006.10.041

@article{4b6d39cd166a40cdaa6bbe4fdadd303e,

title = "Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source",

abstract = "Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.",

keywords = "Chemical beam epitaxy, Gallium arsenide nitride, Impurities, Temperature programmed desorption",

author = "H. Suzuki and K. Nishimura and Lee, {H. S.} and Y. Ohshita and N. Kojima and M. Yamaguchi",

year = "2007",

month = apr,

day = "23",

doi = "10.1016/j.tsf.2006.10.041",

language = "English",

volume = "515",

pages = "5008--5011",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "12",

}

TY - JOUR

T1 - Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

AU - Suzuki, H.

AU - Nishimura, K.

AU - Lee, H. S.

AU - Ohshita, Y.

AU - Kojima, N.

AU - Yamaguchi, M.

PY - 2007/4/23

Y1 - 2007/4/23

N2 - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.

AB - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.

KW - Chemical beam epitaxy

KW - Gallium arsenide nitride

KW - Impurities

KW - Temperature programmed desorption

UR - http://www.scopus.com/inward/record.url?scp=33947120600&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947120600&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.10.041

DO - 10.1016/j.tsf.2006.10.041

M3 - Article

AN - SCOPUS:33947120600

VL - 515

SP - 5008

EP - 5011

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 12

ER -