TY - JOUR
T1 - Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
AU - Suzuki, H.
AU - Nishimura, K.
AU - Lee, H. S.
AU - Ohshita, Y.
AU - Kojima, N.
AU - Yamaguchi, M.
N1 - Funding Information:
This work was supported partly by the Ministry of Education, Culture, Sports, Science and Technology as a Private University Academic Frontier Center Program, and by the New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI).
PY - 2007/4/23
Y1 - 2007/4/23
N2 - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
AB - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
KW - Chemical beam epitaxy
KW - Gallium arsenide nitride
KW - Impurities
KW - Temperature programmed desorption
UR - http://www.scopus.com/inward/record.url?scp=33947120600&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2006.10.041
DO - 10.1016/j.tsf.2006.10.041
M3 - Article
AN - SCOPUS:33947120600
VL - 515
SP - 5008
EP - 5011
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 12
ER -