Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

H. Suzuki, K. Nishimura, Haeseok Lee, Y. Ohshita, N. Kojima, M. Yamaguchi

Research output: Contribution to journalArticle

22 Citations (Scopus)


Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.

Original languageEnglish
Pages (from-to)5008-5011
Number of pages4
JournalThin Solid Films
Issue number12
Publication statusPublished - 2007 Apr 23
Externally publishedYes



  • Chemical beam epitaxy
  • Gallium arsenide nitride
  • Impurities
  • Temperature programmed desorption

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this