Abstract
Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
| Original language | English |
|---|---|
| Pages (from-to) | 5008-5011 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 515 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 Apr 23 |
| Externally published | Yes |
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Keywords
- Chemical beam epitaxy
- Gallium arsenide nitride
- Impurities
- Temperature programmed desorption
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source. / Suzuki, H.; Nishimura, K.; Lee, Haeseok; Ohshita, Y.; Kojima, N.; Yamaguchi, M.
In: Thin Solid Films, Vol. 515, No. 12, 23.04.2007, p. 5008-5011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source
AU - Suzuki, H.
AU - Nishimura, K.
AU - Lee, Haeseok
AU - Ohshita, Y.
AU - Kojima, N.
AU - Yamaguchi, M.
PY - 2007/4/23
Y1 - 2007/4/23
N2 - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
AB - Crystal quality of GaAsN films can be improved by using CBE for low-temperature growth. However, low-temperature growth increases C incorporation in the films, which degrades their electrical properties. Consequently, C incorporation was investigated in view of the surface reaction of N sources on a substrate surface, and MMHy and DMHy were compared. When MMHy was used as an N source, C concentration in GaAsN drastically increases below 380 °C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHx, therefore, the C concentration can then be reduced using DMHy.
KW - Chemical beam epitaxy
KW - Gallium arsenide nitride
KW - Impurities
KW - Temperature programmed desorption
UR - http://www.scopus.com/inward/record.url?scp=33947120600&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947120600&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2006.10.041
DO - 10.1016/j.tsf.2006.10.041
M3 - Article
VL - 515
SP - 5008
EP - 5011
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 12
ER -