Carbon-induced undersaturation of silicon self-interstitials

R. Scholz, U. Gösele, Joo Youl Huh, T. Y. Tan

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Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles.

Original languageEnglish
Pages (from-to)200-202
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 1998 Dec 1


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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