Carbon-induced undersaturation of silicon self-interstitials

R. Scholz, U. Gösele, J. Y. Huh, T. Y. Tan

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

Carbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause retarded diffusion of boron. In addition, we predict that due to this undersaturation, the diffusion of built-in carbon spikes will lead to strongly non-Gaussian concentration profiles.

Original languageEnglish
Pages (from-to)200-202
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number2
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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