Carbon microspheres with micro- and mesopores synthesized via spray pyrolysis for high-energy-density, electrical-double-layer capacitors

Yongju Yoo, Gi Dae Park, Yun Chan Kang

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The graphitic properties, optimized pore structure, and surface chemistry of carbon materials are important factors for developing high-performance supercapacitors. In this study, we synthesized partially graphitic carbon microspheres with large surface area and multimodal pore-size distribution (high amount of micropores and small amount of mesopores) using a facile spray pyrolysis process. Vanadium oxide-carbon microspheres were synthesized via spray pyrolysis at 1000 °C. Subsequently, selective etching of vanadium oxide using NH 4 OH solution resulted in porous carbon (PC) microspheres with large surface area and multimodal pore structure. The post-treatment process of PC microspheres at 900 °C in Ar atmosphere enabled not only the synthesis of partially graphitic carbon microsphere via graphitization, but also the elimination of organic functional groups at the carbon surface. The supercapacitor fabricated with post-treated PC microspheres (PC-900) with a voltage window of 2.5 V exhibited high specific capacitance (110 F g −1 at 30 A g −1 ) and excellent rate capability in an organic electrolyte. The PC-900 supercapacitor could also produce high energy density (23 Wh kg −1 ) even at high power density (42 kW kg −1 ). In addition, the PC-900 supercapacitor exhibited excellent cyclability with capacitance reduction of approximately 5% after 10,000 cycles.

Original languageEnglish
Pages (from-to)193-200
Number of pages8
JournalChemical Engineering Journal
DOIs
Publication statusPublished - 2019 Jun 1

Keywords

  • Porous carbon microsphere
  • Spray pyrolysis
  • Sucrose
  • Supercapacitor
  • Vanadium oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Environmental Chemistry
  • Chemical Engineering(all)
  • Industrial and Manufacturing Engineering

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