Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Chien Fong Lo; Lu Liu; Byung Hwan Chu; Fan Ren; Stephen J. Pearton; Sylvain Doré; Chien Hsing Hsu; Jihyun Kim; Amir M. Dabiran; Peter P. Chow

doi:10.1116/1.3672010

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Chien Fong Lo, Lu Liu, Byung Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Doré, Chien Hsing Hsu, Jihyun Kim, Amir M. Dabiran, Peter P. Chow

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO₂ and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.

Original language	English
Article number	010606
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	30
Issue number	1
DOIs	https://doi.org/10.1116/1.3672010
Publication status	Published - 2012 Jan

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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Lo, C. F., Liu, L., Chu, B. H., Ren, F., Pearton, S. J., Doré, S., Hsu, C. H., Kim, J., Dabiran, A. M., & Chow, P. P. (2012). Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 30(1), [010606]. https://doi.org/10.1116/1.3672010

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. / Lo, Chien Fong; Liu, Lu; Chu, Byung Hwan; Ren, Fan; Pearton, Stephen J.; Doré, Sylvain; Hsu, Chien Hsing; Kim, Jihyun; Dabiran, Amir M.; Chow, Peter P.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 30, No. 1, 010606, 01.2012.

Research output: Contribution to journal › Article › peer-review

Lo, CF, Liu, L, Chu, BH, Ren, F, Pearton, SJ, Doré, S, Hsu, CH, Kim, J, Dabiran, AM & Chow, PP 2012, 'Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 30, no. 1, 010606. https://doi.org/10.1116/1.3672010

Lo, Chien Fong ; Liu, Lu ; Chu, Byung Hwan ; Ren, Fan ; Pearton, Stephen J. ; Doré, Sylvain ; Hsu, Chien Hsing ; Kim, Jihyun ; Dabiran, Amir M. ; Chow, Peter P. / Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2012 ; Vol. 30, No. 1.

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title = "Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments",

abstract = "The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.",

author = "Lo, {Chien Fong} and Lu Liu and Chu, {Byung Hwan} and Fan Ren and Pearton, {Stephen J.} and Sylvain Dor{\'e} and Hsu, {Chien Hsing} and Jihyun Kim and Dabiran, {Amir M.} and Chow, {Peter P.}",

note = "Funding Information: The work performed at UF is partially supported by the NSF under Grant No. ECCS 0901711 monitored by Yogesh B. Gianchandani and the McKnight Brain Institute, Brain and Spinal Cord Injury Research Trust Fund.",

year = "2012",

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doi = "10.1116/1.3672010",

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AU - Lo, Chien Fong

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AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Doré, Sylvain

AU - Hsu, Chien Hsing

AU - Kim, Jihyun

AU - Dabiran, Amir M.

AU - Chow, Peter P.

N1 - Funding Information: The work performed at UF is partially supported by the NSF under Grant No. ECCS 0901711 monitored by Yogesh B. Gianchandani and the McKnight Brain Institute, Brain and Spinal Cord Injury Research Trust Fund.

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Y1 - 2012/1

N2 - The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.

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Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

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