Abstract
The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO 2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.
| Original language | English |
|---|---|
| Article number | 010606 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 30 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2012 Jan 1 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. / Lo, Chien Fong; Liu, Lu; Chu, Byung Hwan; Ren, Fan; Pearton, Stephen J.; Doré, Sylvain; Hsu, Chien Hsing; Kim, Ji Hyun; Dabiran, Amir M.; Chow, Peter P.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 1, 010606, 01.01.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments
AU - Lo, Chien Fong
AU - Liu, Lu
AU - Chu, Byung Hwan
AU - Ren, Fan
AU - Pearton, Stephen J.
AU - Doré, Sylvain
AU - Hsu, Chien Hsing
AU - Kim, Ji Hyun
AU - Dabiran, Amir M.
AU - Chow, Peter P.
PY - 2012/1/1
Y1 - 2012/1/1
N2 - The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO 2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.
AB - The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO 2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.
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UR - http://www.scopus.com/inward/citedby.url?scp=84863075991&partnerID=8YFLogxK
U2 - 10.1116/1.3672010
DO - 10.1116/1.3672010
M3 - Article
VL - 30
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 1
M1 - 010606
ER -