Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Chien Fong Lo, Lu Liu, Byung Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Doré, Chien Hsing Hsu, Jihyun Kim, Amir M. Dabiran, Peter P. Chow

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Abstract

The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.

Original languageEnglish
Article number010606
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume30
Issue number1
DOIs
Publication statusPublished - 2012 Jan

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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