Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Chien Fong Lo, Lu Liu, Byung Hwan Chu, Fan Ren, Stephen J. Pearton, Sylvain Doré, Chien Hsing Hsu, Ji Hyun Kim, Amir M. Dabiran, Peter P. Chow

Research output: Contribution to journalArticle

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Abstract

The effect of ambient temperature on the detection sensitivity of carbon monoxide (CO) using ZnO nanorod-gated AlGaN/GaN high electron mobility transistor (HEMT) sensors was studied over a range of temperatures from 25 to 400°C. An increase of the HEMT drain current was observed for exposure to the CO-containing ambients, due to chemisorbed oxygen on the ZnO surface reacting with CO to form CO 2 and releasing electrons to the oxide surface, increasing the counter charges in the two-dimensional electron gas channel of the HEMT. By increasing the detection temperature from 25°C to 150°C, the CO detection sensitivity, δI/I, and detection limit were significantly improved from 0.23% to 7.5% and from 100 ppm to ∼30 ppm, respectively. However, the sensitivity of the CO detection was degraded by the decrease of mobility and saturation drain current of HEMT at temperatures higher than 200°C.

Original languageEnglish
Article number010606
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume30
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

Fingerprint

High electron mobility transistors
high electron mobility transistors
Nanorods
Carbon monoxide
carbon monoxide
nanorods
Drain current
Temperature
temperature
Two dimensional electron gas
releasing
ambient temperature
electron gas
counters
saturation
Oxides
Oxygen
oxides
Electrons
sensitivity

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. / Lo, Chien Fong; Liu, Lu; Chu, Byung Hwan; Ren, Fan; Pearton, Stephen J.; Doré, Sylvain; Hsu, Chien Hsing; Kim, Ji Hyun; Dabiran, Amir M.; Chow, Peter P.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 30, No. 1, 010606, 01.01.2012.

Research output: Contribution to journalArticle

Lo, Chien Fong ; Liu, Lu ; Chu, Byung Hwan ; Ren, Fan ; Pearton, Stephen J. ; Doré, Sylvain ; Hsu, Chien Hsing ; Kim, Ji Hyun ; Dabiran, Amir M. ; Chow, Peter P. / Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2012 ; Vol. 30, No. 1.
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AU - Doré, Sylvain

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