Carrier localization in basal-plane stacking faults in Si-doped nonpolar a-plane (1120) GaN epilayers containing different defect densities

Jihoon Kim, Sung Min Hwang, Yong Gon Seo, Jung Hoon Song, Ki Nam Park, Jung ho Park, Soohwan Jang, Kwang Hyeon Baik

Research output: Contribution to journalArticle

Abstract

We investigated carrier localization in basal-plane stacking faults (BPSF) in Si-doped nonpolar a-plane GaN (a-GaN) epilayers containing various BPSF densities. Different SiNx interlayers were used to control the BPSF density in the a-GaN films. Significantly reduced BPSF densities were realized by the insertion of thick SiNx and multi-SiNx/GaN interlayers. BPSF-related emissions in low-temperature photoluminescence (PL) spectra showed the smallest full width at half maximum (25 meV), as well as predominant near-band-edge emission peaks for samples with multi-SiNx/GaN interlayers. The role of BPSFs as carrier/exciton localization centers was confirmed from the S-shaped temperature dependence of the BPSF peak energies. Moreover, carrier localization energies, extracted from the S-shaped curve fitted to Varshni's formula, were determined not to be solely dependent on BPSF density. It is suggested that localization energy can be influenced by other factors such as donors in the vicinity of a BPSF or polarization-induced electric fields. Carrier localization energies within BPSFs were in good agreement with the low-temperature activation energies from Arrhenius plots of integrated PL intensity. Stronger carrier localization within BPSFs can be realized when a-GaN epilayers contain multi-SiNx/GaN interlayers.

Original languageEnglish
Pages (from-to)11591-11598
Number of pages8
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number11
DOIs
Publication statusPublished - 2016

Fingerprint

Epilayers
Defect density
Stacking faults
crystal defects
Temperature
defects
interlayers
Photoluminescence
photoluminescence
Arrhenius plots
energy
Full width at half maximum
Excitons
insertion
Activation energy
plots
Electric fields
excitons
Polarization
activation energy

Keywords

  • Basal-plane stacking fault
  • Carrier localization
  • GaN
  • Nonpolar

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Carrier localization in basal-plane stacking faults in Si-doped nonpolar a-plane (1120) GaN epilayers containing different defect densities. / Kim, Jihoon; Hwang, Sung Min; Seo, Yong Gon; Song, Jung Hoon; Park, Ki Nam; Park, Jung ho; Jang, Soohwan; Baik, Kwang Hyeon.

In: Journal of Nanoscience and Nanotechnology, Vol. 16, No. 11, 2016, p. 11591-11598.

Research output: Contribution to journalArticle

Kim, Jihoon ; Hwang, Sung Min ; Seo, Yong Gon ; Song, Jung Hoon ; Park, Ki Nam ; Park, Jung ho ; Jang, Soohwan ; Baik, Kwang Hyeon. / Carrier localization in basal-plane stacking faults in Si-doped nonpolar a-plane (1120) GaN epilayers containing different defect densities. In: Journal of Nanoscience and Nanotechnology. 2016 ; Vol. 16, No. 11. pp. 11591-11598.
@article{d0646cf4ee80428699ba1a28c5c929a0,
title = "Carrier localization in basal-plane stacking faults in Si-doped nonpolar a-plane (1120) GaN epilayers containing different defect densities",
abstract = "We investigated carrier localization in basal-plane stacking faults (BPSF) in Si-doped nonpolar a-plane GaN (a-GaN) epilayers containing various BPSF densities. Different SiNx interlayers were used to control the BPSF density in the a-GaN films. Significantly reduced BPSF densities were realized by the insertion of thick SiNx and multi-SiNx/GaN interlayers. BPSF-related emissions in low-temperature photoluminescence (PL) spectra showed the smallest full width at half maximum (25 meV), as well as predominant near-band-edge emission peaks for samples with multi-SiNx/GaN interlayers. The role of BPSFs as carrier/exciton localization centers was confirmed from the S-shaped temperature dependence of the BPSF peak energies. Moreover, carrier localization energies, extracted from the S-shaped curve fitted to Varshni's formula, were determined not to be solely dependent on BPSF density. It is suggested that localization energy can be influenced by other factors such as donors in the vicinity of a BPSF or polarization-induced electric fields. Carrier localization energies within BPSFs were in good agreement with the low-temperature activation energies from Arrhenius plots of integrated PL intensity. Stronger carrier localization within BPSFs can be realized when a-GaN epilayers contain multi-SiNx/GaN interlayers.",
keywords = "Basal-plane stacking fault, Carrier localization, GaN, Nonpolar",
author = "Jihoon Kim and Hwang, {Sung Min} and Seo, {Yong Gon} and Song, {Jung Hoon} and Park, {Ki Nam} and Park, {Jung ho} and Soohwan Jang and Baik, {Kwang Hyeon}",
year = "2016",
doi = "10.1166/jnn.2016.13557",
language = "English",
volume = "16",
pages = "11591--11598",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "11",

}

TY - JOUR

T1 - Carrier localization in basal-plane stacking faults in Si-doped nonpolar a-plane (1120) GaN epilayers containing different defect densities

AU - Kim, Jihoon

AU - Hwang, Sung Min

AU - Seo, Yong Gon

AU - Song, Jung Hoon

AU - Park, Ki Nam

AU - Park, Jung ho

AU - Jang, Soohwan

AU - Baik, Kwang Hyeon

PY - 2016

Y1 - 2016

N2 - We investigated carrier localization in basal-plane stacking faults (BPSF) in Si-doped nonpolar a-plane GaN (a-GaN) epilayers containing various BPSF densities. Different SiNx interlayers were used to control the BPSF density in the a-GaN films. Significantly reduced BPSF densities were realized by the insertion of thick SiNx and multi-SiNx/GaN interlayers. BPSF-related emissions in low-temperature photoluminescence (PL) spectra showed the smallest full width at half maximum (25 meV), as well as predominant near-band-edge emission peaks for samples with multi-SiNx/GaN interlayers. The role of BPSFs as carrier/exciton localization centers was confirmed from the S-shaped temperature dependence of the BPSF peak energies. Moreover, carrier localization energies, extracted from the S-shaped curve fitted to Varshni's formula, were determined not to be solely dependent on BPSF density. It is suggested that localization energy can be influenced by other factors such as donors in the vicinity of a BPSF or polarization-induced electric fields. Carrier localization energies within BPSFs were in good agreement with the low-temperature activation energies from Arrhenius plots of integrated PL intensity. Stronger carrier localization within BPSFs can be realized when a-GaN epilayers contain multi-SiNx/GaN interlayers.

AB - We investigated carrier localization in basal-plane stacking faults (BPSF) in Si-doped nonpolar a-plane GaN (a-GaN) epilayers containing various BPSF densities. Different SiNx interlayers were used to control the BPSF density in the a-GaN films. Significantly reduced BPSF densities were realized by the insertion of thick SiNx and multi-SiNx/GaN interlayers. BPSF-related emissions in low-temperature photoluminescence (PL) spectra showed the smallest full width at half maximum (25 meV), as well as predominant near-band-edge emission peaks for samples with multi-SiNx/GaN interlayers. The role of BPSFs as carrier/exciton localization centers was confirmed from the S-shaped temperature dependence of the BPSF peak energies. Moreover, carrier localization energies, extracted from the S-shaped curve fitted to Varshni's formula, were determined not to be solely dependent on BPSF density. It is suggested that localization energy can be influenced by other factors such as donors in the vicinity of a BPSF or polarization-induced electric fields. Carrier localization energies within BPSFs were in good agreement with the low-temperature activation energies from Arrhenius plots of integrated PL intensity. Stronger carrier localization within BPSFs can be realized when a-GaN epilayers contain multi-SiNx/GaN interlayers.

KW - Basal-plane stacking fault

KW - Carrier localization

KW - GaN

KW - Nonpolar

UR - http://www.scopus.com/inward/record.url?scp=84992486772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84992486772&partnerID=8YFLogxK

U2 - 10.1166/jnn.2016.13557

DO - 10.1166/jnn.2016.13557

M3 - Article

AN - SCOPUS:84992486772

VL - 16

SP - 11591

EP - 11598

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 11

ER -