Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs: Be

Jaiho Chung, S. J. Chung, Sang Hoon Lee, B. J. Kirby, J. A. Borchers, Y. J. Cho, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

Original languageEnglish
Article number237202
JournalPhysical Review Letters
Volume101
Issue number23
DOIs
Publication statusPublished - 2008 Dec 2

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interlayers
spacers
charge carriers
saturation
reflectance
neutrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs : Be. / Chung, Jaiho; Chung, S. J.; Lee, Sang Hoon; Kirby, B. J.; Borchers, J. A.; Cho, Y. J.; Liu, X.; Furdyna, J. K.

In: Physical Review Letters, Vol. 101, No. 23, 237202, 02.12.2008.

Research output: Contribution to journalArticle

Chung, Jaiho ; Chung, S. J. ; Lee, Sang Hoon ; Kirby, B. J. ; Borchers, J. A. ; Cho, Y. J. ; Liu, X. ; Furdyna, J. K. / Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs : Be. In: Physical Review Letters. 2008 ; Vol. 101, No. 23.
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