Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, T. Kamiya

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.

Original languageEnglish
Pages (from-to)2511-2513
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number13
DOIs
Publication statusPublished - 2004 Sep 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation'. Together they form a unique fingerprint.

Cite this