Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

N. J. Ekins-Daukes; H. S. Lee; T. Sasaki; M. Yamaguchi; A. Khan; T. Takamoto; T. Agui; K. Kamimura; M. Kaneiwa; M. Imaizumi; T. Ohshima; T. Kamiya

doi:10.1063/1.1794371

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, T. Kamiya

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

Carrier removal rate in the n ⁺ emitter and p ^- base layers in lattice-mismatched In _0.56Ga _0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 ¹⁷ cm ^-3 p ^- material was observed to be at a rate R _c = 1.3 cm ^-1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 ¹⁸ cm ^-3 n ⁺ emitter layer was reduced to 1 × 10 ¹⁸ cm ^-3 after exposure to an electron fluence.

Original language	English
Pages (from-to)	2511-2513
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1794371
Publication status	Published - 2004 Sep 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1794371

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Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation. / Ekins-Daukes, N. J.; Lee, H. S.; Sasaki, T.; Yamaguchi, M.; Khan, A.; Takamoto, T.; Agui, T.; Kamimura, K.; Kaneiwa, M.; Imaizumi, M.; Ohshima, T.; Kamiya, T.

In: Applied Physics Letters, Vol. 85, No. 13, 27.09.2004, p. 2511-2513.

Research output: Contribution to journal › Article

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abstract = "Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.",

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AU - Ekins-Daukes, N. J.

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AU - Yamaguchi, M.

AU - Khan, A.

AU - Takamoto, T.

AU - Agui, T.

AU - Kamimura, K.

AU - Kaneiwa, M.

AU - Imaizumi, M.

AU - Ohshima, T.

AU - Kamiya, T.

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