Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

N. J. Ekins-Daukes; H. S. Lee; T. Sasaki; M. Yamaguchi; A. Khan; T. Takamoto; T. Agui; K. Kamimura; M. Kaneiwa; M. Imaizumi; T. Ohshima; T. Kamiya

doi:10.1063/1.1794371

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

N. J. Ekins-Daukes, H. S. Lee, T. Sasaki, M. Yamaguchi, A. Khan, T. Takamoto, T. Agui, K. Kamimura, M. Kaneiwa, M. Imaizumi, T. Ohshima, T. Kamiya

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11 Citations (Scopus)

Abstract

Carrier removal rate in the n ⁺ emitter and p ^- base layers in lattice-mismatched In _0.56Ga _0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 ¹⁷ cm ^-3 p ^- material was observed to be at a rate R _c = 1.3 cm ^-1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 ¹⁸ cm ^-3 n ⁺ emitter layer was reduced to 1 × 10 ¹⁸ cm ^-3 after exposure to an electron fluence.

Original language	English
Pages (from-to)	2511-2513
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	13
DOIs	https://doi.org/10.1063/1.1794371
Publication status	Published - 2004 Sep 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1794371

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@article{5d57e97e6af242e58e21fce439dddd17,

title = "Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation",

abstract = "Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.",

author = "Ekins-Daukes, {N. J.} and Lee, {H. S.} and T. Sasaki and M. Yamaguchi and A. Khan and T. Takamoto and T. Agui and K. Kamimura and M. Kaneiwa and M. Imaizumi and T. Ohshima and T. Kamiya",

note = "Funding Information: N.J.E.D. gratefully acknowledges the financial support of a fellowship from the Japan Society for the Promotion of Science (JSPS) and would also like to thank Dr. S. Kawakita for assistance with the sample irradiation and Dr. M. Mazzer for advice on EBIC microscopy. The anonymous reviewers are also thanked for their valuable comments. ",

year = "2004",

month = sep,

day = "27",

doi = "10.1063/1.1794371",

language = "English",

volume = "85",

pages = "2511--2513",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

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TY - JOUR

T1 - Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

AU - Ekins-Daukes, N. J.

AU - Lee, H. S.

AU - Sasaki, T.

AU - Yamaguchi, M.

AU - Khan, A.

AU - Takamoto, T.

AU - Agui, T.

AU - Kamimura, K.

AU - Kaneiwa, M.

AU - Imaizumi, M.

AU - Ohshima, T.

AU - Kamiya, T.

N1 - Funding Information: N.J.E.D. gratefully acknowledges the financial support of a fellowship from the Japan Society for the Promotion of Science (JSPS) and would also like to thank Dr. S. Kawakita for assistance with the sample irradiation and Dr. M. Mazzer for advice on EBIC microscopy. The anonymous reviewers are also thanked for their valuable comments.

PY - 2004/9/27

Y1 - 2004/9/27

N2 - Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.

AB - Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.

UR - http://www.scopus.com/inward/record.url?scp=7544219820&partnerID=8YFLogxK

U2 - 10.1063/1.1794371

DO - 10.1063/1.1794371

M3 - Article

AN - SCOPUS:7544219820

VL - 85

SP - 2511

EP - 2513

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -

Carrier removal in lattice-mismatched InGaP solar cells under 1-MeV-electron irradiation

Abstract

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