Carrier removal rate in the n + emitter and p - base layers in lattice-mismatched In 0.56Ga 0.44P solar cells under 1-MeV-electron irradiation was studied. Standard capacitance-voltage techniques were used to determine the change in carrier concentration in the base layer. The carrier removal in the 1 × 10 17 cm -3 p - material was observed to be at a rate R c = 1.3 cm -1, which was consistent with that of lattice-mismatched InGaP. carrier concentration in the 2 × 10 18 cm -3 n + emitter layer was reduced to 1 × 10 18 cm -3 after exposure to an electron fluence.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)