Carrier removal rates and deep traps in neutron irradiated n-GaN films

In-Hwan Lee, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, N. G. Kolin, V. M. Boiko, A. V. Korulin, S. J. Pearton

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Carrier removal rates and deep trap spectra were measured in neutron irradiated n-GaN samples grown by metalorganic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE, and epitaxial lateral overgrowth (ELOG). The carrier removal rates were found to significantly increase with donor doping and to decrease in the sequence MOCVD/ ELOG/ HVPE. The most prominent traps created by irradiation were quasi-hole traps with energy 0.6-0.7 eV and electron traps with energy 0.45 eV. The former were associated with disordered regions in GaN and determine the carrier removal rate in undoped films. The latter were attributed to radiation defect complexes with shallow donors.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number9
DOIs
Publication statusPublished - 2011 Aug 3
Externally publishedYes

Fingerprint

Neutrons
Metallorganic chemical vapor deposition
traps
neutrons
Hole traps
metalorganic chemical vapor deposition
Electron traps
Vapor phase epitaxy
Hydrides
Doping (additives)
vapor phase epitaxy
Irradiation
hydrides
Radiation
Defects
irradiation
energy
defects
radiation
electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrochemistry

Cite this

Lee, I-H., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., ... Pearton, S. J. (2011). Carrier removal rates and deep traps in neutron irradiated n-GaN films. Journal of the Electrochemical Society, 158(9). https://doi.org/10.1149/1.3607986

Carrier removal rates and deep traps in neutron irradiated n-GaN films. / Lee, In-Hwan; Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Kolin, N. G.; Boiko, V. M.; Korulin, A. V.; Pearton, S. J.

In: Journal of the Electrochemical Society, Vol. 158, No. 9, 03.08.2011.

Research output: Contribution to journalArticle

Lee, I-H, Polyakov, AY, Smirnov, NB, Govorkov, AV, Kozhukhova, EA, Kolin, NG, Boiko, VM, Korulin, AV & Pearton, SJ 2011, 'Carrier removal rates and deep traps in neutron irradiated n-GaN films', Journal of the Electrochemical Society, vol. 158, no. 9. https://doi.org/10.1149/1.3607986
Lee, In-Hwan ; Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Kozhukhova, E. A. ; Kolin, N. G. ; Boiko, V. M. ; Korulin, A. V. ; Pearton, S. J. / Carrier removal rates and deep traps in neutron irradiated n-GaN films. In: Journal of the Electrochemical Society. 2011 ; Vol. 158, No. 9.
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