Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots

Kwang Jae Lee, Byounggu Jo, Cheul Ro Lee, In-Hwan Lee, Jin Soo Kim, Dae Kon Oh, Jong Su Kim, Sang Jun Lee, Sam Kyu Noh, Jae Young Leem, Mee Yi Ryu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

From the transmission electron microscope image, the seven-stacked InAs/InAlGaAs QDs on an InP substrate were spatially ordered instead of usual on-top vertical alignment. The increasing rate of the QD size became almost saturated by increasing the number of layers. The photoluminescence (PL) intensity for the seven-stacked InAs/InAlGaAs QDs was decreased up to 60K and remained almost stable at the temperature range from 60 to 220K. And then, the intensity was again drastically decreased with further increasing temperature. The emission peak was first red-shifted at the ratio of 0.446 meV/K from 20 to 60K. However, the degree of the red-shift in the emission peak from 60 to 220K was decreased at the negligibly small ratio of 0.028 meV/K. Above 220K, the emission peak was again significantly decreased at the ratio of 0.323 meV/K. While increasing the temperature, the carrier lifetimes obtained from the PL decay profiles for the seven-stacked QDs initially enhanced and then, almost stable at a certain temperature range. Finally, the PL decay time was decreased with further increasing temperature. These behaviors can be explained by the partial repopulation process of thermally excited carriers among QDs.

Original languageEnglish
Article number113505
JournalJournal of Applied Physics
Volume109
Issue number11
DOIs
Publication statusPublished - 2011 Jun 1
Externally publishedYes

Fingerprint

quantum dots
photoluminescence
temperature
decay
carrier lifetime
red shift
electron microscopes
alignment
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, K. J., Jo, B., Lee, C. R., Lee, I-H., Kim, J. S., Oh, D. K., ... Ryu, M. Y. (2011). Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots. Journal of Applied Physics, 109(11), [113505]. https://doi.org/10.1063/1.3592871

Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots. / Lee, Kwang Jae; Jo, Byounggu; Lee, Cheul Ro; Lee, In-Hwan; Kim, Jin Soo; Oh, Dae Kon; Kim, Jong Su; Lee, Sang Jun; Noh, Sam Kyu; Leem, Jae Young; Ryu, Mee Yi.

In: Journal of Applied Physics, Vol. 109, No. 11, 113505, 01.06.2011.

Research output: Contribution to journalArticle

Lee, KJ, Jo, B, Lee, CR, Lee, I-H, Kim, JS, Oh, DK, Kim, JS, Lee, SJ, Noh, SK, Leem, JY & Ryu, MY 2011, 'Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots', Journal of Applied Physics, vol. 109, no. 11, 113505. https://doi.org/10.1063/1.3592871
Lee, Kwang Jae ; Jo, Byounggu ; Lee, Cheul Ro ; Lee, In-Hwan ; Kim, Jin Soo ; Oh, Dae Kon ; Kim, Jong Su ; Lee, Sang Jun ; Noh, Sam Kyu ; Leem, Jae Young ; Ryu, Mee Yi. / Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 11.
@article{9c2e9c6a8859492d88d2d27f4cf5662a,
title = "Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots",
abstract = "From the transmission electron microscope image, the seven-stacked InAs/InAlGaAs QDs on an InP substrate were spatially ordered instead of usual on-top vertical alignment. The increasing rate of the QD size became almost saturated by increasing the number of layers. The photoluminescence (PL) intensity for the seven-stacked InAs/InAlGaAs QDs was decreased up to 60K and remained almost stable at the temperature range from 60 to 220K. And then, the intensity was again drastically decreased with further increasing temperature. The emission peak was first red-shifted at the ratio of 0.446 meV/K from 20 to 60K. However, the degree of the red-shift in the emission peak from 60 to 220K was decreased at the negligibly small ratio of 0.028 meV/K. Above 220K, the emission peak was again significantly decreased at the ratio of 0.323 meV/K. While increasing the temperature, the carrier lifetimes obtained from the PL decay profiles for the seven-stacked QDs initially enhanced and then, almost stable at a certain temperature range. Finally, the PL decay time was decreased with further increasing temperature. These behaviors can be explained by the partial repopulation process of thermally excited carriers among QDs.",
author = "Lee, {Kwang Jae} and Byounggu Jo and Lee, {Cheul Ro} and In-Hwan Lee and Kim, {Jin Soo} and Oh, {Dae Kon} and Kim, {Jong Su} and Lee, {Sang Jun} and Noh, {Sam Kyu} and Leem, {Jae Young} and Ryu, {Mee Yi}",
year = "2011",
month = "6",
day = "1",
doi = "10.1063/1.3592871",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Carrier repopulation process for spatially-ordered InAs/InAlGaAs quantum dots

AU - Lee, Kwang Jae

AU - Jo, Byounggu

AU - Lee, Cheul Ro

AU - Lee, In-Hwan

AU - Kim, Jin Soo

AU - Oh, Dae Kon

AU - Kim, Jong Su

AU - Lee, Sang Jun

AU - Noh, Sam Kyu

AU - Leem, Jae Young

AU - Ryu, Mee Yi

PY - 2011/6/1

Y1 - 2011/6/1

N2 - From the transmission electron microscope image, the seven-stacked InAs/InAlGaAs QDs on an InP substrate were spatially ordered instead of usual on-top vertical alignment. The increasing rate of the QD size became almost saturated by increasing the number of layers. The photoluminescence (PL) intensity for the seven-stacked InAs/InAlGaAs QDs was decreased up to 60K and remained almost stable at the temperature range from 60 to 220K. And then, the intensity was again drastically decreased with further increasing temperature. The emission peak was first red-shifted at the ratio of 0.446 meV/K from 20 to 60K. However, the degree of the red-shift in the emission peak from 60 to 220K was decreased at the negligibly small ratio of 0.028 meV/K. Above 220K, the emission peak was again significantly decreased at the ratio of 0.323 meV/K. While increasing the temperature, the carrier lifetimes obtained from the PL decay profiles for the seven-stacked QDs initially enhanced and then, almost stable at a certain temperature range. Finally, the PL decay time was decreased with further increasing temperature. These behaviors can be explained by the partial repopulation process of thermally excited carriers among QDs.

AB - From the transmission electron microscope image, the seven-stacked InAs/InAlGaAs QDs on an InP substrate were spatially ordered instead of usual on-top vertical alignment. The increasing rate of the QD size became almost saturated by increasing the number of layers. The photoluminescence (PL) intensity for the seven-stacked InAs/InAlGaAs QDs was decreased up to 60K and remained almost stable at the temperature range from 60 to 220K. And then, the intensity was again drastically decreased with further increasing temperature. The emission peak was first red-shifted at the ratio of 0.446 meV/K from 20 to 60K. However, the degree of the red-shift in the emission peak from 60 to 220K was decreased at the negligibly small ratio of 0.028 meV/K. Above 220K, the emission peak was again significantly decreased at the ratio of 0.323 meV/K. While increasing the temperature, the carrier lifetimes obtained from the PL decay profiles for the seven-stacked QDs initially enhanced and then, almost stable at a certain temperature range. Finally, the PL decay time was decreased with further increasing temperature. These behaviors can be explained by the partial repopulation process of thermally excited carriers among QDs.

UR - http://www.scopus.com/inward/record.url?scp=79959450314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959450314&partnerID=8YFLogxK

U2 - 10.1063/1.3592871

DO - 10.1063/1.3592871

M3 - Article

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113505

ER -