Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system

Tae Soo Kim, Byoung Woo Lee, Eunsoon Oh, Sang Hoon Lee, J. K. Furdyna

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the "wetting layer" and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of carrier transfer from the wetting layer to the QDs for sufficiently low excitation power and sufficiently high temperature. The dependences of the cw-PL spectra and of PL lifetimes on excitation power are explained by the saturation of the carrier concentration in the QDs as the excitation power increases.

Original languageEnglish
Article number063517
JournalJournal of Applied Physics
Volume107
Issue number6
DOIs
Publication statusPublished - 2010 Apr 14

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wetting
quantum dots
photoluminescence
excitation
saturation
life (durability)
pulses
lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system. / Kim, Tae Soo; Lee, Byoung Woo; Oh, Eunsoon; Lee, Sang Hoon; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 107, No. 6, 063517, 14.04.2010.

Research output: Contribution to journalArticle

@article{d933e88aeda441b0a0c7b558a78256de,
title = "Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system",
abstract = "We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the {"}wetting layer{"} and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of carrier transfer from the wetting layer to the QDs for sufficiently low excitation power and sufficiently high temperature. The dependences of the cw-PL spectra and of PL lifetimes on excitation power are explained by the saturation of the carrier concentration in the QDs as the excitation power increases.",
author = "Kim, {Tae Soo} and Lee, {Byoung Woo} and Eunsoon Oh and Lee, {Sang Hoon} and Furdyna, {J. K.}",
year = "2010",
month = "4",
day = "14",
doi = "10.1063/1.3354064",
language = "English",
volume = "107",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Carrier transfer from wetting layer to quantum dots studied by cw-resolved and time-resolved photoluminescence in CdSe/ZnSe quantum dot system

AU - Kim, Tae Soo

AU - Lee, Byoung Woo

AU - Oh, Eunsoon

AU - Lee, Sang Hoon

AU - Furdyna, J. K.

PY - 2010/4/14

Y1 - 2010/4/14

N2 - We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the "wetting layer" and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of carrier transfer from the wetting layer to the QDs for sufficiently low excitation power and sufficiently high temperature. The dependences of the cw-PL spectra and of PL lifetimes on excitation power are explained by the saturation of the carrier concentration in the QDs as the excitation power increases.

AB - We have studied the cw-resolved and time-resolved photoluminescence (PL) spectra of the CdSe quantum dots (QDs), where PL peaks from the "wetting layer" and from the QDs are observed. The temporal behavior of the PL spectra after a short-pulse laser excitation provides evidence of carrier transfer from the wetting layer to the QDs for sufficiently low excitation power and sufficiently high temperature. The dependences of the cw-PL spectra and of PL lifetimes on excitation power are explained by the saturation of the carrier concentration in the QDs as the excitation power increases.

UR - http://www.scopus.com/inward/record.url?scp=77950585813&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950585813&partnerID=8YFLogxK

U2 - 10.1063/1.3354064

DO - 10.1063/1.3354064

M3 - Article

VL - 107

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063517

ER -