Catalyst-free metal-organic vapor-phase epitaxy of ZnO and GaN nanostructures for visible light-emitting devices

Chul-Ho Lee, Gyu Chul Yi

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

In this chapter, we present a review of current research activities related to ZnO and GaN nanostructures and their heterostructures for visible light-emitting devices. For the preparation of high-quality nanostructures, catalyst-free metalorganic vapor-phase epitaxy has been used because the catalyst-free method offers accurate doping and composition control required for optoelectronic device fabrication. Here, we discuss the catalyst-free growthmechanism, reliable and reproducible position control of ZnO and GaN nanostructures, and their visible light emitter applications.

Original languageEnglish
Title of host publicationNanoScience and Technology
Pages37-66
Number of pages30
Volume58
DOIs
Publication statusPublished - 2012 Oct 8
Externally publishedYes

Publication series

NameNanoScience and Technology
Volume58
ISSN (Print)14344904

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Science(all)
  • Electrical and Electronic Engineering

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    Lee, C-H., & Yi, G. C. (2012). Catalyst-free metal-organic vapor-phase epitaxy of ZnO and GaN nanostructures for visible light-emitting devices. In NanoScience and Technology (Vol. 58, pp. 37-66). (NanoScience and Technology; Vol. 58). https://doi.org/10.1007/978-3-642-22480-5 2