Catalyst-free metal-organic vapor-phase epitaxy of ZnO and GaN nanostructures for visible light-emitting devices

Chul Ho Lee, Gyu Chul Yi

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

In this chapter, we present a review of current research activities related to ZnO and GaN nanostructures and their heterostructures for visible light-emitting devices. For the preparation of high-quality nanostructures, catalyst-free metalorganic vapor-phase epitaxy has been used because the catalyst-free method offers accurate doping and composition control required for optoelectronic device fabrication. Here, we discuss the catalyst-free growthmechanism, reliable and reproducible position control of ZnO and GaN nanostructures, and their visible light emitter applications.

Original languageEnglish
Title of host publicationSemiconductor Nanostructures for Optoelectronic Devices
Subtitle of host publicationProcessing, Characterization and Applications
EditorsGyu-Chul Yi
Pages37-66
Number of pages30
DOIs
Publication statusPublished - 2012
Externally publishedYes

Publication series

NameNanoScience and Technology
Volume58
ISSN (Print)1434-4904

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Lee, C. H., & Yi, G. C. (2012). Catalyst-free metal-organic vapor-phase epitaxy of ZnO and GaN nanostructures for visible light-emitting devices. In G-C. Yi (Ed.), Semiconductor Nanostructures for Optoelectronic Devices: Processing, Characterization and Applications (pp. 37-66). (NanoScience and Technology; Vol. 58). https://doi.org/10.1007/978-3-642-22480-5 2