@inbook{f093195f076143dd84786c6967a2bd2d,
title = "Catalyst-free metal-organic vapor-phase epitaxy of ZnO and GaN nanostructures for visible light-emitting devices",
abstract = "In this chapter, we present a review of current research activities related to ZnO and GaN nanostructures and their heterostructures for visible light-emitting devices. For the preparation of high-quality nanostructures, catalyst-free metalorganic vapor-phase epitaxy has been used because the catalyst-free method offers accurate doping and composition control required for optoelectronic device fabrication. Here, we discuss the catalyst-free growthmechanism, reliable and reproducible position control of ZnO and GaN nanostructures, and their visible light emitter applications.",
author = "Lee, {Chul Ho} and Yi, {Gyu Chul}",
note = "Funding Information: This work was financially supported by the National Creative Research Initiative Project (R16-2004-004-01001-0) of the Korea Science and Engineering Foundations (KOSEF).",
year = "2012",
doi = "10.1007/978-3-642-22480-5_2",
language = "English",
isbn = "9783642224799",
series = "NanoScience and Technology",
publisher = "Springer Verlag",
pages = "37--66",
booktitle = "Semiconductor Nanostructures for Optoelectronic Devices",
}