Catalyst patterned growth of interconnecting graphene layer on SiO2 /Si substrate for integrated devices

Yun Hi Lee, Jong Hee Lee

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24 Citations (Scopus)


The authors report a simple site selective growth for producing interconnecting suspended graphene on SiO2 /Si substrate. The outcome of the process depends on the thickness of the catalyst (Ni) and process ambient on SiO2 /Si wafer by low pressure fast heating chemical-vapor deposition at 820°C for periods from 30 s to 10 min. Raman spectroscopy revealed that the graphene grown on the substrate consists of from 1 to <20 layers, with the number of layers depending on the thickness of the catalyst (Ni). Also, the thickness of Ni catalyst determines whether the graphite layers (GLs) are grown in a suspended form or adhered to the substrate. The possibility of producing qualified as-grown GL supported on a wafer without further processing, such as transferring to another substrate, should contribute to further scientific research and development of graphene.

Original languageEnglish
Article number143102
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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