Catalytic synthesis and photoluminescence of gallium nitride nanowires

S. C. Lyu, O. H. Cha, E. K. Suh, H. Ruh, H. J. Lee, Cheol Jin Lee

Research output: Contribution to journalArticle

78 Citations (Scopus)

Abstract

Single crystalline wurzite GaN nanowires were successfully synthesized on the NiO catalyzed alumina substrate through a simple thermal chemical vapor deposition method. The mixture of Ga and GaN powder was used as the source material of Ga for synthesizing GaN nanowires. The diameter of nanowires ranged 50-60 nm and the length was about hundreds of micrometers. The nanowires were single crystal with hexagonal wurzite structure. The peaks of Raman spectra of GaN nanowires appeared broadened and asymmetric compared with those of bulk GaN. PL spectra under excitation at 325 nm showed a strong emission at 3.315 eV from near band-edge transition and a broad weak emission at 2.695 eV related to deep level defects.

Original languageEnglish
Pages (from-to)136-140
Number of pages5
JournalChemical Physics Letters
Volume367
Issue number1-2
DOIs
Publication statusPublished - 2003 Jan 2
Externally publishedYes

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ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Spectroscopy
  • Atomic and Molecular Physics, and Optics

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