Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Szu Lin Cheng, Gary Shambat, Jesse Lu, Hyun-Yong Yu, Krishna Saraswat, Theodore I. Kamins, Jelena Vuckovic, Yoshio Nishi

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We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.

Original languageEnglish
Article number211101
JournalApplied Physics Letters
Issue number21
Publication statusPublished - 2011 May 23
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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