Cavity-enhanced direct band electroluminescence near 1550 nm from germanium microdisk resonator diode on silicon

Szu Lin Cheng, Gary Shambat, Jesse Lu, Hyun Yong Yu, Krishna Saraswat, Theodore I. Kamins, Jelena Vuckovic, Yoshio Nishi

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk cavity. Diode current-voltage characteristics show a low ideality factor and a high on/off ratio. The optical transmission of the resonator features whispering gallery modes with quality factors of a few hundred. Direct band gap electroluminescence under continuous current injection shows a clear enhancement of emission by the cavity. At this stage, the pumping level is not high enough to cause linewidth narrowing and invert the material. A higher n-type activated doping of germanium is necessary to achieve lasing.

Original languageEnglish
Article number211101
JournalApplied Physics Letters
Volume98
Issue number21
DOIs
Publication statusPublished - 2011 May 23
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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