Abstract
Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.
Original language | English |
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Pages (from-to) | 518-522 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 237-239 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2002 Apr |
Externally published | Yes |
Keywords
- A1. Crystal structure
- A1. Surfaces
- A2. Single crystal growth
- B1. Oxides
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry