Abstract
Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.
| Original language | English |
|---|---|
| Pages (from-to) | 518-522 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 237-239 |
| Issue number | 1-4 I |
| DOIs | |
| Publication status | Published - 2002 Apr 1 |
| Externally published | Yes |
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Keywords
- A1. Crystal structure
- A1. Surfaces
- A2. Single crystal growth
- B1. Oxides
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy. / Ashrafi, A. B M A; Kumano, H.; Suemune, I.; Ok, Y. W.; Seong, Tae Yeon.
In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 I, 01.04.2002, p. 518-522.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy
AU - Ashrafi, A. B M A
AU - Kumano, H.
AU - Suemune, I.
AU - Ok, Y. W.
AU - Seong, Tae Yeon
PY - 2002/4/1
Y1 - 2002/4/1
N2 - Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.
AB - Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.
KW - A1. Crystal structure
KW - A1. Surfaces
KW - A2. Single crystal growth
KW - B1. Oxides
UR - http://www.scopus.com/inward/record.url?scp=0036530513&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036530513&partnerID=8YFLogxK
U2 - 10.1016/S0022-0248(01)01956-X
DO - 10.1016/S0022-0248(01)01956-X
M3 - Article
AN - SCOPUS:0036530513
VL - 237-239
SP - 518
EP - 522
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4 I
ER -