CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy

A. B M A Ashrafi, H. Kumano, I. Suemune, Y. W. Ok, Tae Yeon Seong

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.

Original languageEnglish
Pages (from-to)518-522
Number of pages5
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4 I
DOIs
Publication statusPublished - 2002 Apr 1
Externally publishedYes

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Epitaxial layers
Molecular beam epitaxy
Reflection high energy electron diffraction
molecular beam epitaxy
Electron diffraction
Atomic force microscopy
electron diffraction
Crystalline materials
X rays
Substrates
Buffer layers
Full width at half maximum
high energy electrons
Surface morphology
Surface roughness
atomic force microscopy
X ray diffraction
x rays
zincblende
curves

Keywords

  • A1. Crystal structure
  • A1. Surfaces
  • A2. Single crystal growth
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy. / Ashrafi, A. B M A; Kumano, H.; Suemune, I.; Ok, Y. W.; Seong, Tae Yeon.

In: Journal of Crystal Growth, Vol. 237-239, No. 1-4 I, 01.04.2002, p. 518-522.

Research output: Contribution to journalArticle

Ashrafi, A. B M A ; Kumano, H. ; Suemune, I. ; Ok, Y. W. ; Seong, Tae Yeon. / CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy. In: Journal of Crystal Growth. 2002 ; Vol. 237-239, No. 1-4 I. pp. 518-522.
@article{08bdfb0658ed4cdebdba038aa75cbd38,
title = "CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy",
abstract = "Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.",
keywords = "A1. Crystal structure, A1. Surfaces, A2. Single crystal growth, B1. Oxides",
author = "Ashrafi, {A. B M A} and H. Kumano and I. Suemune and Ok, {Y. W.} and Seong, {Tae Yeon}",
year = "2002",
month = "4",
day = "1",
doi = "10.1016/S0022-0248(01)01956-X",
language = "English",
volume = "237-239",
pages = "518--522",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4 I",

}

TY - JOUR

T1 - CdO epitaxial layers grown on (0 0 1) GaAs surfaces by metalorganic molecular-beam epitaxy

AU - Ashrafi, A. B M A

AU - Kumano, H.

AU - Suemune, I.

AU - Ok, Y. W.

AU - Seong, Tae Yeon

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.

AB - Atomically flat CdO thin layers were grown on GaAs(0 0 1) substrates with ZnS buffer layers. The grown layers were evaluated by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM), X-ray rocking curve (XRC), and transmission electron diffraction (TED) measurements. The RHEED observations of CdO thin layers showed two-dimensional growth mode revealed by streaky patterns with excellent homogeneity through [1 1 0] and [1̄ 1 0] directions. This streaky pattern is the reflection of the flat surface morphology in atomic level assessed by AFM measurements with the surface root mean square roughness of ∼ 1 nm. The crystalline structure as well as quality of the thin CdO layers was investigated by X-ray diffraction and XRC measurements which indicated the single-crystalline rocksalt CdO thin layers with minimum full-width at half maximum under the optimal growth condition. The TED observation showed the epitaxial relationship between the rocksalt CdO and zincblende GaAs substrate as [1 1 0]CdO∥[1 1 0]GaAs, [1 1̄ 0]CdO∥[1 1̄ 0]GaAs, and [0 0 1]CdO∥[0 0 1]GaAs.

KW - A1. Crystal structure

KW - A1. Surfaces

KW - A2. Single crystal growth

KW - B1. Oxides

UR - http://www.scopus.com/inward/record.url?scp=0036530513&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036530513&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01956-X

DO - 10.1016/S0022-0248(01)01956-X

M3 - Article

AN - SCOPUS:0036530513

VL - 237-239

SP - 518

EP - 522

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4 I

ER -